No Arabic abstract
We report on the non-destructive measurement of Youngs modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From the measurements, we extract Youngs modulus in (100) plane, EY,(100) = 261.4+/-20.6 GPa, for beta-Ga2O3 nanoflakes synthesized by low-pressure chemical vapor deposition (LPCVD), and Youngs modulus in [010] direction, EY,[010] = 245.8+/-9.2 GPa, for beta-Ga2O3 nanobelts mechanically cleaved from bulk beta-Ga2O3 crystal grown by edge-defined film-fed growth (EFG) method. The Youngs moduli extracted directly on nanomechanical resonant device platforms are comparable to theoretical values from first-principle calculations and experimentally extracted values from bulk crystal. This study yields important quantitative nanomechanical properties of beta-Ga2O3 crystals, and helps pave the way for further engineering of beta-Ga2O3 micro/nanoelectromechanical systems (M/NEMS) and transducers.
Yttrium Iron Garnet (YIG) and bismuth (Bi) substituted YIG (Bi0.1Y2.9Fe5O12, BYG) films are grown in-situ on single crystalline Gadolinium Gallium Garnet (GGG) substrates [with (100) and (111) orientations] using pulsed laser deposition (PLD) technique. As the orientation of the Bi-YIG film changes from (100) to (111), the lattice constant is enhanced from 12.384 {AA} to 12.401 {AA} due to orientation dependent distribution of Bi3+ ions at dodecahedral sites in the lattice cell. Atomic force microscopy (AFM) images show smooth film surfaces with roughness 0.308 nm in Bi-YIG (111). The change in substrate orientation leads to the modification of Gilbert damping which, in turn, gives rise to the enhancement of ferromagnetic resonance (FMR) line width. The best values of Gilbert damping are found to be (0.54)*10-4, for YIG (100) and (6.27)*10-4, for Bi-YIG (111) oriented films. Angle variation measurements of the Hr are also performed, that shows a four-fold symmetry for the resonance field in the (100) grown film. In addition, the value of effective magnetization (4{pi}Meff) and extrinsic linewidth ({Delta}H0) are observed to be dependent on substrate orientation. Hence PLD growth can assist single-crystalline YIG and BYG films with a perfect interface that can be used for spintronics and related device applications.
Beta gallium oxide (beta-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. beta-Ga2O3 thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal beta-Ga2O3 nanomechanical resonators using beta-Ga2O3 nanoflakes grown via low-pressure chemical vapor deposition (LPCVD). By investigating beta-Ga2O3 circular drumhead structures, we demonstrate multimode nanoresonators up to the 6th mode in high and very high frequency (HF / VHF) bands, and also realize spatial mapping and visualization of the multimode motion. These measurements reveal a Youngs modulus of E_Y = 261 GPa and anisotropic biaxial built-in tension of 37.5 MPa and 107.5 MPa. We find that thermal annealing can considerably improve the resonance characteristics, including ~40% upshift in frequency and ~90% enhancement in quality (Q) factor. This study lays a foundation for future exploration and development of mechanically coupled and tunable beta-Ga2O3 electronic, optoelectronic, and physical sensing devices.
We explore mechanical properties of top down fabricated, singly clamped inverted conical GaAs nanowires. Combining nanowire lengths of 2-9 $mu$m with foot diameters of 36-935 nm yields fundamental flexural eigenmodes spanning two orders of magnitude from 200 kHz to 42 MHz. We extract a size-independent value of Youngs modulus of (45$pm$3) GPa. With foot diameters down to a few tens of nanometers, the investigated nanowires are promising candidates for ultra-flexible and ultra-sensitive nanomechanical devices.
As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.
Using a time-resolved magneto-optical Kerr effect (TR-MOKE) microscope, we observed ultrafast demagnetization of inverse-spinel-type NiCo2O4 (NCO) epitaxial thin films of the inverse spinel type ferrimagnet NCO with perpendicular magnetic anisotropy. This microscope uses a pump-probe method, where the sample is pumped at 1030 nm, and magnetic domain images are acquired via MOKE microscopy at 515 nm (the second harmonic). We successfully observed the dynamics of the magnetic domain of the NCO thin film via laser irradiation, and obtained a demagnetization time constant of approximately 0.4 ps. This time constant was significantly smaller than the large time constants reported for other half-metallic oxides. These results, combined with the results of our x-ray photoemission spectroscopy study, indicate that this NCO thin film is a ferrimagnetic metal whose electronic structure deviates from the theoretically predicted half-metallic one.