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Register a new userCharged Vacancy Defects in Black Phosphorus Monolayer Phosphorene
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The two-dimensional semiconductor phosphorene has attracted extensive research interests for potential applications in optoelectronics, spintronics, catalysis, sensors, and energy conversion. To harness phosphorenes potential requires a better understanding of how intrinsic defects control carrier concentration, character, and mobility. Using density-functional theory and a charge correction scheme to account for the appropriate boundary conditions, we conduct a comprehensive study of the effect of structure on the formation energy, electronic structure, and charge transition level of the charged vacancy point defects in phosphorene. We predict that the neutral vacancy exhibits a 9-5 ring structure with a formation energy of 1.7 eV and transitions to a negatively charged state at a Fermi level 1.04 eV above the valence band maximum. The corresponding optical charge transitions display sizeable Frank-Condon shifts with a large Stokes shift of 0.3 eV. Phosphorene vacancies should become negatively charged in n-doped phosphorene, which would passivate the dopants and reduce the charge carrier concentration and mobility.
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Forthcoming applications in electronics and optoelectronics make phosphorene a subject of vigorous research efforts. Solvent-assisted exfoliation of phosphorene promises affordable delivery in industrial quantities for future applications. We demonstrate, using equilibrium, steered and umbrella sampling molecular dynamics, that the 1-ethyl-3- methylimidazolium tetrafluoroborate [EMIM][BF4] ionic liquid is an excellent solvent for phosphorene exfoliation. The presence of both hydrophobic and hydrophilic moieties, as well as substantial shear viscosity, allows [EMIM][BF4] simultaneously to facilitate separation of phosphorene sheets and to protect them from getting in direct contact with moisture and oxygen. The exfoliation thermodynamics is moderately unfavorable, indicating that an external stimulus is necessary. Unexpectedly, [EMIM][BF4] does not coordinates phosphorene by p-electron stacking with the imidazole ring. Instead, the solvation proceeds via hydrophobic side chains, while polar imidazole rings form an electrostatically stabilized protective layer. The simulations suggest that further efforts in solvent engineering for phosphorene exfoliation should concentrate on use of weakly coordinating ions and grafting groups that promote stronger dispersion interactions, and on elongation of nonpolar chains.
We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and bond-resolved non-contact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged $mathrm{SV}^-$ leads to the passivation of dangling bonds and thus the quenching of in-gap states, which can be achieved by mild thermal annealing or STM tip manipulation. SV exhibits a strong and symmetric Friedel oscillation (FO) pattern, while $mathrm{SV}^-$ shows an asymmetric FO pattern with local perturbation amplitude reduced by one order of magnitude and a faster decay rate. The enhanced passivation by forming $mathrm{SV}^-$ can be attributed to its weak dipole-like perturbation, consistent with density-functional theory and numerical calculations. Therefore, self-passivated $mathrm{SV}^-$ is electronically benign and acts as a much weaker scattering center, which may hold the key to further enhance the charge mobility of BP and its analogs.
Two-dimensional (2D) monolayer phosphorene, a 2D system with quasi-one-dimensional (quasi-1D) excitons, provides a unique 2D platform for investigating the dynamics of excitons in reduced dimensions and fundamental many-body interactions. However, on the other hand, the quasi-1D excitonic nature can limit the luminescence quantum yield significantly. Here, we report exciton brightening in monolayer phosphorene achieved via the dimensionality modification of excitons from quasi-1D to zero-dimensional (0D), through the transference of monolayer phosphorene samples onto defect-rich oxide substrate deposited by plasma-enhanced chemical vapor deposition (PECVD). The resultant interfacial luminescent local states lead to exciton localization and trigger efficient photon emissions at a new wavelength of ~920 nm. The luminescence quantum yield of 0D-like localized excitons is measured to be at least 33.6 times larger than that of intrinsic quasi-1D free excitons in monolayer phosphorene. This is primarily due to the reduction of non-radiative decay rate and the possibly enhanced radiative recombination probability. Owing to the large trapping energy, this new photon emission from the localized excitons in monolayer phosphorene can be observed at elevated temperature, which contrasts markedly with defect-induced photon emission from transition metal dichalcogenide (TMD) semiconductor monolayers that can only be observed at cryogenic temperatures. Our findings introduce new avenues for the development of novel photonic devices based on monolayer phosphorene, such as near-infrared lighting devices that are operable at elevated temperature. More importantly, 2D phosphorene with quasi-1D free excitons and 0D-like localized excitons provides a unique platform to investigate the fundamental phenomena in the ideal 2D-1D-0D hybrid system.
Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here a comprehensive density functional theory-based investigation of 7 kinds of point defects in a recently produced {gamma} allotrope of 2D phosphorus carbide ({gamma}-PC) is conducted. The defects, such as antisites, single C or P, and double C and P and C and C vacancies, are found to be stable in {gamma}-PC, while the Stone-Wales defect is not presented in {gamma}-PC due to its transition metal dichalcogenides-like structure. The formation energies, stability, and surface density of the considered defect species as well as their influence on the electronic structure of {gamma}-PC is systematically identified. The formation of point defects in {gamma}-PC is found to be less energetically favourable then in graphene, phosphorene, and MoS2. Meanwhile, defects can significantly modulate the electronic structure of {gamma}-PC by inducing hole/electron doping. The predicted scanning tunneling microscopy images suggest that most of the point defects are easy to distinguish from each other and that they can be easily recognized in experiments.
Exfoliated black phosphorus has recently emerged as a new two-dimensional crystal that, due to its peculiar and anisotropic crystalline and electronic band structures, may have potentially important applications in electronics, optoelectronics and photonics. Despite the fact that the edges of layered crystals host a range of singular properties whose characterization and exploitation are of utmost importance for device development, the edges of black phosphorus remain poorly characterized. In this work, the atomic structure and the behavior of phonons near different black phosphorus edges are experimentally and theoretically studied using Raman spectroscopy and density functional theory calculations. Polarized Raman results show the appearance of new modes at the edges of the sample, and their spectra depend on the atomic structure of the edges (zigzag or armchair). Theoretical simulations confirm that the new modes are due to edge phonon states that are forbidden in the bulk, and originated from the lattice termination rearrangements.
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