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Register a new userStability and electronic properties of two-dimensional gallium
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Two-dimensional metals offer intriguing possibilities to explore metallicity and other related properties in systems with reduced dimensionality. Here, following recent experimental reports of synthesis of two-dimensional metallic gallium (gallenene) on insulating substrates, we conduct a computational search of gallenene structures using the Particle Swarm Optimization algorithm, and identify stable low energy structures. Our calculations of the critical temperature for conventional superconductivity yield values $sim 7$ K for gallenene. We also emulate the presence of the substrate by introducing the external confining potential and test its effect on the structures with unstable phonons.
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Two-dimensional van der Waals (2D vdW) materials that display ferromagnetism and piezoelectricity have received increased attention. Despite numerous 2D materials have so far been reported as ferromagnetic, developing an air stable and transferable vdW material that is multiferroic has been challenging. To address this problem, we report our work on layered transition metal silicates that are derivatives of kaolinites and lizardites with transition metal substituting on Al$^{3+}$ and Mg$^{2+}$ sites using ab-initio calculations. Using Density Functional Theory (DFT), we show that these compounds are stable under varying O$_2$ partial pressure and can be synthesized using a surface assisted method. We show that these materials have finite out-of-plane piezoelectric response thanks to the lack of inversion symmetry and also they can be tailored to be ferrimagnetic with a non-zero net moment.
Isolated oxygen impurities and fully oxidized structures of four stable two-dimensional (2D) SiS structures are investigated by {em ab initio} density functional calculations. Binding energies of oxygen impurities for all the four 2D SiS structures are found larger than those for phosphorene, due to the lower electronegativity of Si atoms. The most stable configurations of isolated oxygen impurities for different 2D SiS structures are decided and the corresponding 2D structures with saturated oxidation (SiSO) are predicted. Among all the four fully oxidized structures, $alpha$-SiSO is demonstrated to be stable by phonon spectra calculations and molecular dynamics (MD) simulations. Electronic structure calculations indicate that $alpha$-SiSO monolayer is semiconducting with a direct band gap of ${approx}2.28$~eV, which can be effectively tuned by in-layer strain. The value of band gap and thermodynamic stability are found depending sensitively on the saturation level of oxygen.
The presence in the graphyne sheets of a variable amount of sp2/sp1 atoms, which can be transformed into sp3-like atoms by covalent binding with one or two fluorine atoms, respectively, allows one to assume the formation of fulorinated graphynes (fluorographynes) with variable F/C stoichiometry. Here, employing DFT band structure calculations, we examine a series of fluorographynes, and the trends in their stability, structural and electronic properties have been discussed as depending on their stoichiometry: from C2F3 (F/C= 1.5) to C4F7 (F/C= 1.75).
We present first-principles calculations of silicene/graphene and germanene/graphene bilayers. Various supercell models are constructed in the calculations in order to reduce the strain of the lattice-mismatched bilayer systems. Our energetics analysis and electronic structure results suggest that graphene can be used as a substrate to synthesize monolayer silicene and germanene. Multiple phases of single crystalline silicene and germanene with different orientations relative to the substrate could coexist at room temperature. The weak interaction between the overlayer and the substrate preserves the low-buckled structure of silicene and germanene, as well as their linear energy bands. The gap induced by breaking the sublattice symmetry in silicene on graphene can be up to 57 meV.
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.
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