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Broadband quantum memory in a cavity via zero spectral dispersion

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 Added by Eugene Moiseev S
 Publication date 2021
  fields Physics
and research's language is English




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We seek to design experimentally feasible broadband, temporally multiplexed optical quantum memory with near-term applications to telecom bands. Specifically, we devise dispersion compensation for an impedance-matched narrow-band quantum memory by exploiting Raman processes over two three-level atomic subensembles, one for memory and the other for dispersion compensation. Dispersion compensation provides impedance matching over more than a full cavity linewidth. Combined with one second spin-coherence lifetime the memory could be capable of power efficiency exceeding 90% leading to 106 modes for temporal multiplexing. Our design could lead to significant multiplexing enhancement for quantum repeaters to be used for telecom quantum networks.



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Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali vapour Raman memories combine high-bandwidth storage, on-demand read-out, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and suffered from four-wave mixing noise. Here we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering anti-resonance for the anti-Stokes field, we also suppress the four-wave mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapour memory, $(15pm2)times10^{-3}$ photons per pulse, with a total efficiency of $(9.5pm0.5)$%.
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