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Register a new userSteps towards a Dislocation Ontology for Crystalline Materials
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The field of Materials Science is concerned with, e.g., properties and performance of materials. An important class of materials are crystalline materials that usually contain ``dislocations -- a line-like defect type. Dislocation decisively determine many important materials properties. Over the past decades, significant effort was put into understanding dislocation behavior across different length scales both with experimental characterization techniques as well as with simulations. However, for describing such dislocation structures there is still a lack of a common standard to represent and to connect dislocation domain knowledge across different but related communities. An ontology offers a common foundation to enable knowledge representation and data interoperability, which are important components to establish a ``digital twin. This paper outlines the first steps towards the design of an ontology in the dislocation domain and shows a connection with the already existing ontologies in the materials science and engineering domain.
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In addition to being the core quantity in density functional theory, the charge density can be used in many tertiary analyses in materials sciences from bonding to assigning charge to specific atoms. The charge density is data-rich since it contains information about all the electrons in the system. With increasing utilization of machine-learning tools in materials sciences, a data-rich object like the charge density can be utilized in a wide range of applications. The database presented here provides a modern and user-friendly interface for a large and continuously updated collection of charge densities as part of the Materials Project. In addition to the charge density data, we provide the theory and code for changing the representation of the charge density which should enable more advanced machine-learning studies for the broader community.
Crystals are a state of matter characterised by periodic order. Yet crystalline materials can harbour disorder in many guises, such as non-repeating variations in composition, atom displacements, bonding arrangements, molecular orientations, conformations, charge states, orbital occupancies, or magnetic structure. Disorder can sometimes be random, but more usually it is correlated. Frontier research into disordered crystals now seeks to control and exploit the unusual patterns that persist within these correlated disordered states in order to access functional responses inaccessible to conventional crystals. In this review we survey the core design principles at the disposal of materials chemists that allow targeted control over correlated disorder. We show how these principles---often informed by long-studied statistical mechanical models---can be applied across an unexpectedly broad range of materials, including organics, supramolecular assemblies, oxide ceramics, and metal--organic frameworks. We conclude with a forward-looking discussion of the exciting link to function in responsive media, thermoelectrics, topological phases, and information storage.
Defect microstructures formed in ion-irradiated metals, for example iron or tungsten, often exhibit patterns of spatially ordered nano-scale dislocation loops. We show that such ordered dislocation loop structures may form spontaneously as a result of Brownian motion of loops, biased by the angular-dependent elastic interaction between the loops. Patterns of spatially ordered loops form once the local density of loops produced by ion irradiation exceeds a critical threshold value.
Charge transport in crystalline organic semiconductors is intrinsically limited by the presence of large thermal molecular motions, which are a direct consequence of the weak van der Waals inter-molecular interactions. These lead to an original regime of transport called textit{transient localization}, sharing features of both localized and itinerant electron systems. After a brief review of experimental observations that pose a challenge to the theory, we concentrate on a commonly studied model which describes the interaction of the charge carriers with inter-molecular vibrations. We present different theoretical approaches that have been applied to the problem in the past, and then turn to more modern approaches that are able to capture the key microscopic phenomenon at the origin of the puzzling experimental observations, i.e. the quantum localization of the electronic wavefuntion at timescales shorter than the typical molecular motions. We describe in particular a relaxation time approximation which clarifies how the transient localization due to dynamical molecular motions relates to the Anderson localization realized for static disorder, and allows us to devise strategies to improve the mobility of actual compounds. The relevance of the transient localization scenario to other classes of systems is briefly discussed.
Machine-learning force fields (MLFF) should be accurate, computationally and data efficient, and applicable to molecules, materials, and interfaces thereof. Currently, MLFFs often introduce tradeoffs that restrict their practical applicability to small subsets of chemical space or require exhaustive datasets for training. Here, we introduce the Bravais-Inspired Gradient-Domain Machine Learning (BIGDML) approach and demonstrate its ability to construct reliable force fields using a training set with just 10-200 geometries for materials including pristine and defect-containing 2D and 3D semiconductors and metals, as well as chemisorbed and physisorbed atomic and molecular adsorbates on surfaces. The BIGDML model employs the full relevant symmetry group for a given material, does not assume artificial atom types or localization of atomic interactions and exhibits high data efficiency and state-of-the-art energy accuracies (errors substantially below 1 meV per atom) for an extended set of materials. Extensive path-integral molecular dynamics carried out with BIGDML models demonstrate the counterintuitive localization of benzene--graphene dynamics induced by nuclear quantum effects and allow to rationalize the Arrhenius behavior of hydrogen diffusion coefficient in a Pd crystal for a wide range of temperatures.
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