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Register a new userThe annual energy yield of mono- and bifacial silicon heterojunction solar modules with high-index dielectric nanodisk arrays as anti-reflective and light trapping structures
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While various nanophotonic structures applicable to relatively thin crystalline silicon-based solar cells were proposed to ensure effective light in-coupling and light trapping in the absorber, it is of great importance to evaluate their performance on the solar module level under realistic irradiation conditions. Here, we analyze the annual energy yield of relatively thin heterojunction (HJT) solar module architectures when optimized anti-reflective and light trapping titanium dioxide (TiO$_2$) nanodisk square arrays are applied on the front and rear cell interfaces. Our numerical study shows that upon reducing crystalline silicon (c-Si) wafer thickness, the relative increase of the annual energy yield can go up to 11.0 %$_text{rel}$ and 43.0 %$_text{rel}$ for mono- and bifacial solar modules, respectively, when compared to the reference modules with flat optimized anti-reflective coatings of HJT solar cells.
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Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent photonic light concentration that enhances their performance as solar absorbers. Using numerical simulations we show, how light concentration is induced by high optical cross sections of the individual SiNWs but cannot be optimized independently of the SiNW array absorption. While an ideal spatial density exists, for which the SiNW array absorption for VIS and NIR wavelengths reaches a maximum, the spatial correlation of SiNWs in an array suppresses the formation of optical Mie modes responsible for light concentration. We show that different from SiNWs with straight sidewalls, arrays of inverted silicon nanocones (SiNCs) permit to avoid the mode suppression. In fact they give rise to an altered set of photonic modes which is induced by the spatial correlation of SiNCs in the array, and therefore show a higher degree of freedom to independently optimize light absorption and light concentration. Apart from explaining the good light absorbing and concentrating properties of SiNC arrays, the work justifies a revaluation of SiNW arrays as optical absorbers.
We optimize multilayered anti-reflective coatings for photovoltaic devices, using modern evolutionary algorithms. We apply a rigorous methodology to show that a given structure, which is particularly regular, emerge spontaneously in a very systematical way for a very broad range of conditions. The very regularity of the structure allows for a thorough physical analysis of how the designs operate. This allows to understand that the central part is a photonic crystal utilized as a buffer for light, and that the external layers have the purpose of reducing the impedance mismatch between the outer media and the Bloch mode supported by the photonic crystal. This shows how optimization can suggest new design rules and be considered as a source of inspiration. Finally, we fabricate these structures with easily deployable techniques.
We closely study the local amplifications of visible light on a thin dielectric slab presenting a sub-wavelength array of small, rectangular, bottom-closed holes. The high-quality Fabry-Perot resonances of eigen modes which vertically oscillate, and their corresponding near-field maps, especially inside the voids, are numerically quantified with RCWA and analytically interpreted through a quasi-exact modal expansion. This last method gives explicit opto-geometrical rules allowing to finely understand the general trends in 1D and 2D. In more advanced examples, we show that multi-cavity and/or slightly thicker two-dimensional gratings may generate anomalously frequency-susceptible surfaces over a broad spectral range. Also, dielectric membranes a few nanometers thick only, can catch light, with tremendous enhancements of the electric field intensity ($>10^6$) that largely extends in the surrounding space.
Spatial light modulators (SLMs) are central to numerous applications ranging from high-speed displays to adaptive optics, structured illumination microscopy, and holography. After decades of advances, SLM arrays based on liquid crystals can now reach large pixel counts exceeding 10^6 with phase-only modulation with a pixel pitch of less than 10 {mu}m and reflectance around 75%. However, the rather slow modulation speed in such SLMs (below hundreds of Hz) presents limitations for many applications. Here we propose an SLM architecture that can achieve high pixel count with high-resolution phase-only modulation at high speed in excess of GHz. The architecture consists of a tunable two-dimensional array of vertically oriented, one-sided microcavities that are tuned through an electro-optic material such as barium titanate (BTO). We calculate that the optimized microcavity design achieves a {pi} phase shift under an applied bias voltage below 10 V, while maintaining nearly constant reflection amplitude. As two model applications, we consider high-speed 2D beam steering as well as beam forming. The outlined design methodology could also benefit future design of spatial light modulators with other specifications (for example amplitude modulators). This high-speed SLM architecture promises a wide range of new applications ranging from fully tunable metasurfaces to optical computing accelerators, high-speed interconnects, true 2D phased array beam steering, and quantum computing with cold atom arrays.
We numerically propose an all-dielectric hybrid metamaterial (MM) to realize all-optical switch and logic gates in shortwave infrared (SWIR) band. Such MM consists of one silicon rod and one Ge2Sb2Te5 (GST) rod pair. Utilizing the transition from amorphous to crystalline state of GST, such MM can produce electromagnetically induced transparency (EIT) analogue with active control. Based on this, we realized all-optical switching at 1500 nm with a modulation depth 84%. Besides, three different logic gates, NOT, NOR and OR, can also be achieved in this device simultaneously. Thanks to the reversible and fast phase transition process of GST, this device possesses reconfigurable ability as well as fast response time, and has potential applications in future optical networks.
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