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Register a new userMoire Superlattice Modulations in Single-Unit-Cell FeTe Films Grown on NbSe2 Single Crystals
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Interface can be a fertile ground for exotic quantum states, including topological superconductivity, Majorana mode, fractal quantum Hall effect, unconventional superconductivity, Mott insulator, etc. Here we grow single-unit-cell (1UC) FeTe film on NbSe2 single crystal by molecular beam epitaxy (MBE) and investigate the film in-situ with home-made cryogenic scanning tunneling microscopy (STM) and non-contact atomic force microscopy (AFM) combined system. We find different stripe-like superlattice modulations on grown FeTe film with different misorientation angles with respect to NbSe2 substrate. We show that these stripe-like superlattice modulations can be understood as moire pattern forming between FeTe film and NbSe2 substrate. Our results indicate that the interface between FeTe and NbSe2 is atomically sharp. By STM-AFM combined measurement, we suggest the moire superlattice modulations have an electronic origin when the misorientation angle is relatively small (<= 3 degree) and have structural relaxation when the misorientation angle is relatively large (>= 10 degree).
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We studied the temperature dependence of the diagonal double-stripe spin order in one and two unit cell thick layers of FeTe grown on the topological insulator Bi_2Te_3 via spin-polarized scanning tunneling microscopy. The spin order persists up to temperatures which are higher than the transition temperature reported for bulk Fe_1+yTe with lowest possible excess Fe content y. The enhanced spin order stability is assigned to a strongly decreased y with respect to the lowest values achievable in bulk crystal growth, and effects due to the interface between the FeTe and the topological insulator. The result is relevant for understanding the recent observation of a coexistence of superconducting correlations and spin order in this system.
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Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomena with depth-dependent atomic resolution as well as element- and orbital selectivity. Here, we utilize a combination of core-level and valence-band soft x-ray standing-wave photoemission spectroscopy, in conjunction with scanning transmission electron microscopy, to probe the depth-dependent and single-unit-cell resolved electronic structure of an isovalent manganite superlattice [Eu0.7Sr0.3MnO3/La0.7Sr0.3MnO3]x15 wherein the electronic-structural properties are intentionally modulated with depth via engineered oxygen octahedra rotations/tilts and A-site displacements. Our unit-cell resolved measurements reveal significant transformations in the local chemical and electronic valence-band states, which are consistent with the layer-resolved first-principles theoretical calculations, thus opening the door for future depth-resolved studies of a wide variety of hetero-engineered material systems.
Recent experiments have observed possible spin- and valley-polarized insulators and spin-triplet superconductivity in twisted double bilayer graphene, a moire structure consisting of a pair of Bernal-stacked bilayer graphene. Besides the continuously tunable band widths controlled by an applied displacement field and twist angle, these moire bands also possess van Hove singularities near the Fermi surface and a field-dependent nesting which is far from perfect. Here we carry out a perturbative renormalization group analysis to unbiasedly study the competition among all possible instabilities in twisted double bilayer graphene and related systems with a similar van Hove fermiology in the presence of weak but finite repulsive interactions. Our key finding is that there are several competing magnetic, valley, charge, and superconducting instabilities arising from interactions in twisted double bilayer graphene, which can be tuned by controlling the displacement field and the twist angle. In particular, we show that spin- or valley-polarized uniform instabilities generically dominate under moderate interactions smaller than the band width, whereas $p$-wave spin-triplet topological superconductivity and exotic spin-singlet modulated paired state become important as the interactions decrease. Realization of our findings in general moire systems with a similar van Hove fermiology should open up new opportunities for manipulating topological superconductivity and spin- or valley-polarized states in highly tunable platforms.
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