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Register a new userDefects and phase formation in non-stoichiometric LaFeO$_3$: a combined theoretical and experimental study
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Daniel Mutter
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The defect chemistry of perovskite compounds is directly related to the stoichiometry and to the valence states of the transition metal ions. Such relations are of high interest as they offer the possibility to influence the catalytic activity of perovskites for the application in solid-oxide fuel- and electrolyser cells. Combining theoretical and experimental approaches, we explore the feasibility of actively manipulating the valence state of Fe and the concentration of point defects by synthesizing non-stoichiometric LaFeO$_3$ (LFO). In the theoretical part, formation energies and concentrations of point defects were determined as a function of processing conditions by first-principles DFT+U calculations. Based on the DFT+U results, significant compositional deviations from stoichiometric LFO cannot be expected by providing rich or poor conditions of the oxidic precursor compounds (Fe$_2$O$_3$ and La$_2$O$_3$) in a solid-state processing route. In the experimental part, LFO was synthesized with a targeted La-site deficiency. We analyze the resulting phases in detail by X-ray diffraction and dedicated microscopy methods, namely scanning electron microscopy (SEM) and (scanning) transmission electron Microscopy ((S)TEM) in combination with energy dispersive X-ray spectroscopy (EDS) and electron energy-loss spectrometry (EELS). Instead of a variation of the La/Fe ratio, a mixture of two phases, Fe$_2$O$_3$/LaFeO$_3$, was observed resulting in an invariant charge state of Fe, which is in line with the theoretical results. We discuss our findings with respect to partly differing assumptions made in previously published studies on this material system.
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We have investigated the effect of Ti doping on the transport properties coupled with the magnetic ones in Sm$_{0.55}$Sr$_{0.45}$Mn$_{1-eta}$Ti$_{eta}$O$_3$ ($0 leq eta leq 0.04$). The parent compound, Sm$_{0.55}$Sr$_{0.45}$MnO$_3$, exhibits a first-order paramagnetic-insulator to ferromagnetic-metal transition just below $T_{rm c}$ = 128 K. With substitution of Ti at Mn sites ($B$-site), $T_{rm c}$ decreases approximately linearly at the rate of 22 K$%^{-1}$ while the width of thermal hysteresis in magnetization and resistivity increases almost in an exponential fashion. The most spectacular effect has been observed for the composition $eta$=0.03, where a magnetic field of only 1 T yields a huge magnetoresistance, $1.2 times 10^7$ $%$ at $T_capprox$ 63 K. With increasing magnetic field, the transition shifts towards higher temperature, and the first-order nature of the transition gets weakened and eventually becomes crossover above a critical field ($H_{cr}$) which increases with Ti doping. For Ti doping above 0.03, the system remains insulting without any ferromagnetic ordering down to 2 K. The Monte-Carlo calculations based on a two-band double exchange model show that the decrease of $T_{rm c}$ with Ti doping is associated with the increase of the lattice distortions around the doped Ti ions.
The effects of rhenium doping in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focusing on the change of the saturation magnetization and the Gilbert damping parameter. Both experimental and theoretical results show that the saturation magnetization decreases with increasing Re doping level, while at the same time Gilbert damping parameter increases. The experimental low temperature saturation magnetic induction exhibits a 29 percent decrease, from 2.31 T to 1.64 T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 0.0027, which is close to the theoretically calculated Gilbert damping parameter. With 10 atomic percent Re doping, the damping parameter increases to 0.0090, which is in good agreement with the theoretical value of 0.0073. The increase in damping parameter with Re doping is explained by the increase in density of states at Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the damping parameter are observed to be weakly decreasing with decreasing temperature.
A combined experimental and theoretical study is presented of the band gap of AlInN, confirming the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition dependent bowing parameters for these quantities are extracted. Additionally, composition dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at much lower In composition than expected from a VCA approach.
Because substitutions of BH4- anion with Br can stabilize the hexagonal structure of the LiBH4 at room temperature, leading to a high Li-ion conductivity, its thermodynamic stability has been investigated in this work. The binary LiBH4-LiBr system has been explored by means of X-ray diffraction and differential scanning calorimetry, combined with an assessment of thermodynamic properties. The monophasic zone of the hexagonal Li(BH4)1-x(Br)x solid solution has been defined from x=0.30 to x=0.55 at room temperature. Solubility limits have been determined by in-situ X-ray diffraction at various temperatures. For the formation of the h-Li(BH4)0.6(Br)0.4 solid solution, a value of the enthalpy of mixing has been determined experimentally equal to 1.0 kJ/mol. In addition, the enthalpy of melting has been measured for various compositions. Lattice stabilities of LiBH4 and LiBr have been determined by ab initio calculations, using CRYSTAL and VASP codes. Combining results of experiments and theoretical calculations, the LiBH4-LiBr phase diagram has been determined in all composition and temperature range by the CALPHAD method.
The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 electron. Hybrid-functional electronic-band-structures show the luminescence of the Eu defect to be strongly dependent on the local defect geometry. The 4-coordinated Eu substitutional dopant is the most promising candidate to present the typical Eu3+ luminescence, while the 6-coordinated Eu-vacancy complex is expected not to present any luminescent behaviour. Preliminary experimental results on the treatment of diamond films with Eu-containing precursor indicate the possible incorporation of Eu into diamond films treated by drop-casting. Changes in the PL spectrum, with the main luminescent peak shifting from approximately 614 nm to 611 nm after the growth plasma exposure, and the appearance of a shoulder peak at 625 nm indicate the potential incorporation. Drop-casting treatment with an electronegative polymer material was shown not to be necessary to observe the Eu signature following the plasma exposure, and increased the background luminescence.
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