No Arabic abstract
We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We design and fabricate sets of interdigital transducers (IDTs) to induce 4 {mu}m SAWs via the inverse piezoelectric (PZE) effect between the PZE [110] direction (set as {theta} = 0{deg}) and the non-PZE [100] direction ({theta} = 45{deg}) on GaAs. We also prepare ZnO film sputtered GaAs substrates in order to launch SAWs efficiently by IDTs even in the non-PZE direction. We quantify acoustic velocities between 1.4 and 300 K from the resonant frequencies in the S11 parameter using a network analyzer. We observe parabolic velocity-temperature trends at all {theta}-values both on GaAs and ZnO/GaAs substrates. Below 200 K, in ZnO/GaAs substrates slower SAW modes appear around the [110] direction, which are unseen at RT.
Surface acoustic wave (SAW) devices based on thin films of ZnO are a well established technology. However, SAW devices on bulk ZnO crystals are not practical at room temperature due to the significant damping caused by finite electrical conductivity of the crystal. Here, by operating at low temperatures, we demonstrate effective SAW devices on the (0001) surface of bulk ZnO crystals, including a delay line operating at SAW wavelengths of {lambda} = 4 and 6 {mu}m and a one-port resonator at a wavelength of {lambda} = 1.6 {mu}m. We find that the SAW velocity is temperature dependent, reaching $v simeq 2.68$ km/s at 10mK. Our resonator reaches a maximum quality factor of $Q_i simeq 1.5times 10^5$, demonstrating that bulk ZnO is highly viable for low temperature SAW applications. The performance of the devices is strongly correlated with the bulk conductivity, which quenches SAW transmission above about 200 K.
A hybrid device comprising a (Al)GaAs quantum dot heterostructure and a LiNbO$_3$ surface acoustic wave resonator is fabricated by heterointegration. High acoustic quality factors $Q>4000$ are demonstrated for an operation frequency $fapprox 300$ MHz. The measured large quality factor-frequency products $Qtimes f>10^{12}$ ensures the suppression of decoherence due to thermal noise for temperatures exceeding $T>50,mathrm{K}$. Frequency and position dependent optomechanical coupling of single quantum dots and the resonator modes is observed.
We demonstrate that photoemission properties of GaAs photocathodes (PCs) can be altered by surface acoustic waves (SAWs) generated on the PC surface due to dynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate that electron effective lifetime in p-doped GaAs may increase by a factor of 10x to 20x. It implies a significant, by a factor of 2x to 3x, increase of quantum efficiency (QE) for GaAs PCs. Essential steps in device fabrication are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of I-V characteristic of the SAW device, and ability to survive high-temperature annealing.
The ability to generate, amplify, mix, and modulate sound with no harmonic distortion in a passive opto-acoustic device would revolutionize the field of acoustics. The photo-thermo-acoustic (PTA) effect allows to transduce light into sound without any bulk electro-mechanically moving parts and electrical connections, as for conventional loudspeakers. Also, PTA devices can be integrated with standard silicon complementary metal-oxide semiconductor (CMOS) fabrication techniques. Here, we demonstrate that the ultimate PTA efficiency of graphene aerogels, depending on their particular thermal and optical properties, can be experimentally achieved by reducing their mass density. Furthermore, we illustrate that the aerogels behave as an omnidirectional point-source throughout the audible range with no harmonic distortion. This research represents a breakthrough for audio-visual consumer technologies and it could pave the way to novel opto-acoustic sensing devices.
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynamics in patterned GaMnAs at variable temperatures has important implications for potential single domain magneto-logic devices made from ferromagnetic semiconductors.