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Register a new userLocalization of the Helical Edge States in the Absense of External Magnetic Field
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Theoretically, the helical edge states of two-dimensional topological insulators are protected from coherent backscattering due to nonmagnetic disorder provided electron interactions are not too strong. Experimentally, the edges typically do not demonstrate the systematic and robust quantization, at the same time little is known about the sub-Kelvin temperature behavior. Here, we report the surprising localization of the edge states in an 8 nm HgTe quantum well in zero magnetic field at millikelvin temperatures. Additionally, the magnetoresistance data at 0.5 K for the edges few micrometers long suggests the field-dependent localization length $l_Bpropto B^{-alpha}$, with $alpha$ ranging approximately from $1.6$ to $2.8$ at fields $Blesssim0.1,text{T}$ and $alphaapprox1.1$ at higher fields up to $0.5,text{T}$. In the frame of disordered interacting edge, these values of $alpha$ correspond to the Luttinger liquid parameters $Kapprox 0.9-1.1$ and $Kapprox 0.6$, respectively. We discuss possible scenarios which could result in the zero magnetic field localization.
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We study electronic transport across a helical edge state exposed to a uniform magnetic ({$vec B$}) field over a finite length. We show that this system exhibits Fabry-Perot type resonances in electronic transport. The intrinsic spin anisotropy of the helical edge states allows us to tune these resonances by changing the direction of the {$vec B$} field while keeping its magnitude constant. This is in sharp contrast to the case of non-helical one dimensional electron gases with a parabolic dispersion, where similar resonances do appear in individual spin channels ($uparrow$ and $downarrow$) separately which, however, cannot be tuned by merely changing the direction of the {$vec B$} field. These resonances provide a unique way to probe the helical nature of the theory.
Quantum spin Hall insulators are characterized by topologically protected counterpropagating edge states. Here we study the dynamical response of these helical edge states under a time-dependent flux biasing, in the presence of a heat bath. It is shown that the relaxation time of the edge carriers can be determined from a measurement of the dissipative response of topological insulator disks. The effects of various perturbations, including Zeeman coupling and disorder, are also discussed.
We propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe quantum wells (QWs) describing the side maxima of the first valence subband. By using the Hamiltonian, we explore the picture of helical edge states in tensile and compressively strained HgTe QWs. We show that both dispersion and probability density of the edge states can differ significantly from those predicted by the Bernevig-Hughes-Zhang (BHZ) model. Our results pave the way towards further theoretical investigations of HgTe-based quantum spin Hall insulators with direct and indirect band gaps beyond the BHZ model.
Edge states of two-dimensional topological insulators are helical and single-particle backscattering is prohibited by time-reversal symmetry. In this work, we show that an isotropic exchange coupling of helical edge states (HES) to a spin 1/2 impurity subjected to a magnetic field results in characteristic backscattering current noise (BCN) as a function of bias voltage and tilt angle between the direction of the magnetic field and the quantization axis of the HES. In particular, we find transitions from sub-Poissonian (antibunching) to super-Poissonian (bunching) behavior as a direct consequence of the helicity of the edge state electrons. We use the method of full counting statistics within a master equation approach treating the exchange coupling between the spin-1/2 impurity and the HES perturbatively. We express the BCN via coincidence correlation functions of scattering processes between the HES which gives a precise interpretation of the Fano factor in terms of bunching and antibunching behavior of electron jump events. We also investigate the effect of electron-electron interactions in the HES in terms of the Tomonaga-Luttinger liquid theory.
We calculate the conductance of a two-dimensional bilayer with inverted electron-hole bands, to study the sensitivity of the quantum spin Hall insulator (with helical edge conduction) to the combination of electrostatic disorder and a perpendicular magnetic field. The characteristic breakdown field for helical edge conduction splits into two fields with increasing disorder, a field $B_{c}$ for the transition into a quantum Hall insulator (supporting chiral edge conduction) and a smaller field $B_{c}$ for the transition to bulk conduction in a quasi-metallic regime. The spatial separation of the inverted bands, typical for broken-gap InAs/GaSb quantum wells, is essential for the magnetic-field induced bulk conduction --- there is no such regime in HgTe quantum wells.
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