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Register a new userComputing Grain Boundary Diagrams: From Thermodynamic to Mechanical Properties
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Computing the grain boundary (GB) counterparts to bulk phase diagrams represents an emerging research direction with potentially broad impacts. Using a classical embrittlement model system Ga-doped Al, this study demonstrates the feasibility of computing temperature- and composition-dependent GB diagrams to represent not only equilibrium thermodynamic and structural characters, but also mechanical properties. Specifically, hybrid Monte Carlo and molecular dynamics (MC/MD) simulations are used to obtain the equilibrium GB structure as a function of temperature and composition. Simulated GB structures are validated by aberration-corrected scanning transmission electron microscopy. Subsequently, MD tensile tests are performed on the simulated equilibrium GB structures. GB diagrams are computed for not only GB adsorption and disorder, but also interfacial structural and chemical widths, MD ultimate strength, and tensile toughness. A model is established to forecast the ductile-to-brittle transition. This study establishes a new paradigm to compute a spectrum of GB diagrams to enable the investigation of the unique GB composition-structure-property relationship.
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While it is known that alloy components can segregate to grain boundaries (GBs), and that the atomic mobility in GBs greatly exceeds the atomic mobility in the lattice, little is known about the effect of GB segregation on GB diffusion. Atomistic computer simulations offer a means of gaining insights into the segregation-diffusion relationship by computing the GB diffusion coefficients of the alloy components as a function of their segregated amounts. In such simulations, thermodynamically equilibrium GB segregation is prepared by a semi-grand canonical Monte Carlo method, followed by calculation of the diffusion coefficients of all alloy components by molecular dynamics. As a demonstration, the proposed methodology is applied to a GB is the Cu-Ag system. The GB diffusivities obtained exhibit non-trivial composition dependencies that can be explained by site blocking, site competition, and the onset of GB disordering due to the premelting effect.
We describe a molecular dynamics framework for the direct calculation of the short-ranged structural forces underlying grain-boundary premelting and grain-coalescence in solidification. The method is applied in a comparative study of (i) a Sigma 9 <115> 120 degress twist and (ii) a Sigma 9 <110> {411} symmetric tilt boundary in a classical embedded-atom model of elemental Ni. Although both boundaries feature highly disordered structures near the melting point, the nature of the temperature dependence of the width of the disordered regions in these boundaries is qualitatively different. The former boundary displays behavior consistent with a logarithmically diverging premelted layer thickness as the melting temperature is approached from below, while the latter displays behavior featuring a finite grain-boundary width at the melting point. It is demonstrated that both types of behavior can be quantitatively described within a sharp-interface thermodynamic formalism involving a width-dependent interfacial free energy, referred to as the disjoining potential. The disjoining potential for boundary (i) is calculated to display a monotonic exponential dependence on width, while that of boundary (ii) features a weak attractive minimum. The results of this work are discussed in relation to recent simulation and theoretical studies of the thermodynamic forces underlying grain-boundary premelting.
A detailed theoretical and numerical investigation of the infinitesimal single-crystal gradient plasticity and grain-boundary theory of Gurtin (2008) A theory of grain boundaries that accounts automatically for grain misorientation and grain-boundary orientation. Journal of the Mechanics and Physics of Solids 56 (2), 640-662, is performed. The governing equations and flow laws are recast in variational form. The associated incremental problem is formulated in minimization form and provides the basis for the subsequent finite element formulation. Various choices of the kinematic measure used to characterize the ability of the grain boundary to impede the flow of dislocations are compared. An alternative measure is also suggested. A series of three-dimensional numerical examples serve to elucidate the theory.
Mg grain boundary (GB) segregation and GB diffusion can impact the processing and properties of Al-Mg alloys. Yet, Mg GB diffusion in Al has not been measured experimentally or predicted by simulations. We apply atomistic computer simulations to predict the amount and the free energy of Mg GB segregation, and the impact of segregation on GB diffusion of both alloy components. At low temperatures, Mg atoms segregated to a tilt GB form clusters with highly anisotropic shapes. Mg diffuses in Al GBs slower than Al itself, and both components diffuse slowly in comparison with Al GB self-diffusion. Thus, Mg segregation significantly reduces the rate of mass transport along GBs in Al-Mg alloys. The reduced atomic mobility can be responsible for the improved stability of the microstructure at elevated temperatures.
Grain boundaries in Sr-doped LaMnO3 thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behaviour of the grain boundaries can be correlated with substantial modifications of the cation concentration at the interfaces, which can be tuned by changing the overall cationic ratio in the films. In this work, we study the electronic properties of La0.8Sr0.2Mn1-yO3 thin films with variable Mn content. The influence of the cationic composition on the grain boundary and grain bulk electronic properties is elucidated by studying the manganese valence state evolution using spectroscopy techniques and by confronting the electronic properties of epitaxial and polycrystalline films. Substantial differences in the electronic conduction mechanism are found in the presence of grain boundaries and depending on the manganese content. Moreover, the unique defect chemistry of the nanomaterial is elucidated by measuring the electrical resistance of the thin films as a function of oxygen partial pressure, disclosing the importance of the cationic local non-stoichiometry on the thin films behavior.
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