No Arabic abstract
We present an approach to increase the effective light-receiving area of superconducting nanowire single-photon detectors (SNSPD) by means of free-form microlenses that are printed in situ on top of the sensitive detector area using high-resolution multi-photon lithography. We demonstrate a detector based on a niobium-nitride (NbN) nanowire with a 4.5 $mathrm mu$m $times$ 4.5 $mathrm mu$m sensitive area, supplemented with a lens of 60 $mathrm mu$m diameter. For free-space illumination at a wavelength of 1550 nm, the lensed sensor has a 100-fold-increased effective collection area, which leads to strongly enhanced system detection efficiency without the need for long nanowires. Our approach can be readily applied to a wide range of sensor types and effectively overcomes the inherent design conflict between high counting speed due to short sensor reset time, high timing accuracy, and high fabrication yield on the one hand and high collection efficiency through large effective detection areas on the other hand.
Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, $I_mathrm{B}times Z_mathrm{load}$, where $Z_mathrm{load}$ is limited to 50 $Omega$ in standard r.f. electronics. Here, we break this limit by interfacing the 50 $Omega$ load and the SNSPD using an integrated superconducting transmission line taper. The taper is a transformer that effectively loads the SNSPD with high impedance without latching. It increases the amplitude of the detector output while preserving the fast rising edge. Using a taper with a starting width of 500 nm, we experimentally observed a 3.6$times$ higher pulse amplitude, 3.7$times$ faster slew rate, and 25.1 ps smaller timing jitter. The results match our numerical simulation, which incorporates both the hotspot dynamics in the SNSPD and the distributed nature in the transmission line taper. The taper studied here may become a useful tool to interface high-impedance superconducting nanowire devices to conventional low-impedance circuits.
Time- and number-resolved photon detection is crucial for photonic quantum information processing. Existing photon-number-resolving (PNR) detectors usually have limited timing and dark-count performance or require complex fabrication and operation. Here we demonstrate a PNR detector at telecommunication wavelengths based on a single superconducting nanowire with an integrated impedance-matching taper. The prototyping device was able to resolve up to five absorbed photons and had 16.1 ps timing jitter, <2 c.p.s. device dark count rate, $sim$86 ns reset time, and 5.6% system detection efficiency (without cavity) at 1550 nm. Its exceptional distinction between single- and two-photon responses is ideal for coincidence counting and allowed us to directly observe bunching of photon pairs from a single output port of a Hong-Ou-Mandel interferometer. This detector architecture may provide a practical solution to applications that require high timing resolution and few-photon discrimination.
We present a 1024-element imaging array of superconducting nanowire single photon detectors (SNSPDs) using a 32x32 row-column multiplexing architecture. Large arrays are desirable for applications such as imaging, spectroscopy, or particle detection.
We present a time-over-threshold readout technique to count the number of activated pixels from an array of superconducting nanowire single photon detectors (SNSPDs). This technique maintains the intrinsic timing jitter of the individual pixels, places no additional heatload on the cryostat, and retains the intrinsic count rate of the time-tagger. We demonstrate proof-of-principle operation with respect to a four-pixel device. Furthermore, we show that, given some permissible error threshold, the number of pixels that can be reliably read out scales linearly with the intrinsic signal-to-noise ratio of the individual pixel response.
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.