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Register a new userDifferent atom trapping geometries with time averaged adiabatic potentials
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In this article, we have theoretically studied the time averaged adiabatic potential (TAAP) scheme for realizing different atom trapping geometries. It is shown that by varying time orbiting potential (TOP) fields and radio frequency (rf) fields parameters, controlled manipulation of trapping potentials, and conversion from one trapping geometry to another, is possible. The proposed trapping geometries can be useful for studying various atom-optic phenomena such as Bose-Einstein condensation (BEC) in low dimensions, super-fluidity, tunnelling, atom interferometry, etc.
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In this chapter we review the field of radio-frequency dressed atom trapping. We emphasise the role of adiabatic potentials and give simple, but generic models of electromagnetic fields that currently produce traps for atoms at microkelvin temperatures and below. The paper aims to be didactic and starts with general descriptions of the essential ingredients of adiabaticity and magnetic resonance. As examples of adiabatic potentials we pay attention to radio-frequency dressing in both the quadrupole trap and the Ioffe-Pritchard trap. We include a description of the effect of different choices of radio-frequency polarisation and orientations or alignment. We describe how the adiabatic potentials, formed from radio-frequency fields, can themselves be probed and manipulated with additional radio-frequency fields including multi-photon-effects. We include a description of time-averaged adiabatic potentials. Practical issues for the construction of radio-frequency adiabatic potentials are addressed including noise, harmonics, and beyond rotating wave approximation effects.
Time-averaged trapping potentials have played an important role in the development of the field of ultracold atoms. Despite their widespread application, there is not yet a complete understanding of when a system can be considered time-averaged. Here we use Floquet theory to analyse the lowest energy state of time-periodic trapping potentials, and characterise the transition from a localised state in a slowly moving trap to a delocalised state in a rapidly oscillating time-averaged potential. We investigate how the driving parameters affect the density and phase of the Floquet ground state, and provide a quantitative measure of the degree to which they can be considered time-averaged. We study a number of simple representative systems, and comment on the features affecting the experimental realisation of time-averaged trapping potentials.
Three dimensional electrodynamic trapping of neutral atoms has been demonstrated. By applying time-varying inhomogeneous electric fields with micron-sized electrodes, nearly $10^2$ strontium atoms in the $^1S_0$ state have been trapped with a lifetime of 80 ms. In order to design the electrodes, we numerically analyzed the electric field and simulated atomic trajectories in the trap, which showed reasonable agreement with the experiment.
The decay of Rydberg-atom-ion molecules (RAIMs) due to non-adiabatic couplings between electronic potential energy surfaces is investigated. We employ the Born-Huang representation and perform numerical simulations using a Crank-Nicolson algorithm. The non-adiabatic lifetimes of rubidium RAIMs for the lowest ten vibrational states, $ u$, are computed for selected Rydberg principal quantum numbers, $n$. The non-adiabatic lifetimes are found to generally exceed the radiative Rydberg-atom lifetimes. We observe and explain a trend of the lifetimes as a function of $ u$ and $n$, and attribute irregularities to quantum interference arising from a shallow potential well in an inner potential surface. Our results will be useful for future spectroscopic studies of RAIMs.
We demonstrate the possibility of trapping about one hundred million rubidium atoms in a magneto-optical trap with several of the beams passing through a transparent atom chip mounted on a vacuum cell wall. The chip is made of a gold microcircuit deposited on a silicon carbide substrate, with favorable thermal conductivity. We show how a retro-reflected configuration can efficiently address the chip birefringence issues, allowing atom trapping at arbitrary distances from the chip. We also demonstrate detection through the chip, granting a large numerical aperture. This configuration is compared to other atom chip devices, and some possible applications are discussed.
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