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Register a new userImaging Se diffusion across the FeSe/SrTiO$_3$ interface
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Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial electron doping, electron-phonon coupling, and superconducting gap, but the detailed mechanism is unclear. Here we apply scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) to FeSe/SrTiO$_3$ to image the diffusion of selenium into SrTiO$_3$ to an unexpected depth of several unit cells, consistent with the simultaneously observed depth profile of oxygen vacancies. Our density functional theory (DFT) calculations support the crucial role of oxygen vacancies in facilitating the thermally driven Se diffusion. In contrast to excess Se in the FeSe monolayer or FeSe/SrTiO$_3$ interface that is typically removed during post-growth annealing, the diffused Se remains in the top few unit cells of the SrTiO$_3$ bulk after the extended post-growth annealing that is necessary to achieve superconductivity. Thus the unexpected Se in SrTiO$_3$ may contribute to the interfacial electron doping and electron-phonon coupling that enhance $T_mathrm{c}$, suggesting another important role for oxygen vacancies as facilitators of Se diffusion.
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In many unconventional superconductors, the presence of a pseudogap - a suppression in the electronic density of states extending above the critical temperature - has been a long-standing mystery. Here, we employ combined textit{in situ} electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements to reveal an unprecedentedly large pseudogap regime in single-layer FeSe/SrTiO$_3$, an interfacial superconductor where incoherent Cooper pairs are initially formed above $T_{Delta}$ $approx$ 60 K, but where a zero resistance state is only achieved below $T_{0}$ $<$ 30 K. We show that this behavior is accompanied by distinct transport signatures of two-dimensional phase fluctuating superconductivity, suggesting a mixed vortex state hosting incoherent Cooper pairs which persist well above the maximum clean limit $T_{c}$ of $approx$ 40 K. Our work establishes the critical role of reduced dimensionality in driving the complex interplay between Cooper pairing and phase coherence in two-dimensional high-$T_c$ superconductors, providing a paradigm for understanding and engineering higher-$T_{c}$ interfacial superconductors.
Superconductors with topological surface or edge states have been intensively explored for the prospect of realizing Majorana bound states, which obey non-Abelian statistics and are crucial for topological quantum computation. The traditional routes for making topological insulator/superconductor and semiconductor/superconductor heterostructures suffer fabrication difficulties and can only work at low temperature. Here, we use angle-resolved photoemission spectroscopy to directly observe the evolution of a topological transition of band structure nearby the Fermi level in two-dimensional high-T$_{c}$ superconductor FeTe$_{1-x}$Se$_{x}$/SrTiO$_{3}$(001) monolayers, fully consistent with our theoretical calculations. Furthermore, evidence of edge states is revealed by scanning tunneling spectroscopy with assistance of theoretical calculations. Our study provides a simple and tunable platform for realizing and manipulating Majorana states at high temperature.
We use density functional theory to study the structure and the band structure of the monolayer FeSe deposited on the SrTiO$_3$ substrate with the additional layer of Se between them. Top of the SrTiO$_3$ is formed by the double TiO layer with and without oxygen vacancies. Several structures with different arrangements of the additional Se atoms above the double TiO layer is considered. Equilibrium structures were found and the band structures for them were obtained. Near the $Gamma=(0,0,0)$ point of the Brillouin zone, the hole Fermi surface pockets persist and, additionally, an electron pocket appears. Thus neither the presence of the additional Se layer nor the oxygen vacancies in the double TiO layer leads to the sinking of hole bands below the Fermi level near the $Gamma$ point. Necessity to include the strong electronic correlations into account is discussed.
Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $geq 20$ unit cells. The $sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.
Topological insulators are a new class of materials, that exhibit robust gapless surface states protected by time-reversal symmetry. The interplay between such symmetry-protected topological surface states and symmetry-broken states (e.g. superconductivity) provides a platform for exploring novel quantum phenomena and new functionalities, such as 1D chiral or helical gapless Majorana fermions, and Majorana zero modes which may find application in fault-tolerant quantum computation. Inducing superconductivity on topological surface states is a prerequisite for their experimental realization. Here by growing high quality topological insulator Bi$_2$Se$_3$ films on a d-wave superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+delta}$ using molecular beam epitaxy, we are able to induce high temperature superconductivity on the surface states of Bi$_2$Se$_3$ films with a large pairing gap up to 15 meV. Interestingly, distinct from the d-wave pairing of Bi$_2$Sr$_2$CaCu$_2$O$_{8+delta}$, the proximity-induced gap on the surface states is nearly isotropic and consistent with predominant s-wave pairing as revealed by angle-resolved photoemission spectroscopy. Our work could provide a critical step toward the realization of the long sought-after Majorana zero modes.
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