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NMR determination of Van Hove singularity and Lifshitz transitions in nodal-line semimetal ZrSiTe

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 Added by Yefan Tian
 Publication date 2021
  fields Physics
and research's language is English




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We have applied nuclear magnetic resonance spectroscopy to study the distinctive network of nodal lines in the Dirac semimetal ZrSiTe. The low-$T$ behavior is dominated by a symmetry-protected nodal line, with NMR providing a sensitive probe of the diamagnetic response of the associated carriers. A sharp low-$T$ minimum in NMR shift and $(T_1T)^{-1}$ provides a quantitative measure of the dispersionless, quasi-2D behavior of this nodal line. We also identify a van Hove singularity closely connected to this nodal line, and an associated $T$-induced Lifshitz transition. A disconnect in the NMR shift and line width at this temperature indicates the change in electronic behavior associated with this topological change. These features have an orientation-dependent behavior indicating a field-dependent scaling of the associated band energies.



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89 - S. Ichinokura 2021
We demonstrate a new method to control the Fermi level around the van Hove singularity (VHS) in Li-intercalated graphene on the SiC substrate. By angle-resolved photoemission spectroscopy, we observed a clear Lifshitz transition in the vicinity of the VHS by increasing the graphene thickness. This behavior is unexpected in a free-standing Li-intercalated graphene model. The calculation including the substrate suggests that the surface state stabilizes the Fermi level around the VHS of the Dirac bands via hybridization. In addition, we found that a sizable Schottky barrier is formed between graphene and the substrate. These properties allow us to explore the electronic phase diagram around the VHS by controlling the thickness and electric field in the device condition.
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