No Arabic abstract
As a sister compound and isostructural of MnBi2Te4, the high quality MnSb2Te4 single crystals are grown via solid-state reaction where prolonged annealing and narrow temperature window play critical roles on account of its thermal metastability. X-ray diffraction analysis on MnSb2Te4 single crystals reveals pronounced cation intermixing, 28.9(7)% Sb antisite defects on the Mn (3a) site and 19.3(6)% Mn antisite defects on the Sb (6c) site, compared with MnBi2Te4. Unlike antiferromagnetic (AFM) nature MnBi2Te4, MnSb2Te4 contains magnetic and antiferromagnetic competition and exhibits a spin glass (SG) state below 24 K. Its magnetic hysteresis, anisotropy, and relaxation process are investigated in detail with DC and AC magnetization measurements. Moreover, anomalous Hall effect as a p-type conductor is demonstrated through transport measurements. This work grants MnSb2Te4 a possible access to the future exploration of exotic quantum physics by removing the odd/even layer number restraint in intrinsic AFM MnBi2Te4-family materials as a result of the crossover between its magnetism and potential topology in the Sb-Te layer.
Based on the first-principles calculations and theoretical analysis, we investigate the electronic structures, topological phase transition (TPT) and topological properties of layered magnetic compound MnSb2Te4. It has the similar crystal and magnetic structure as the magnetic topological insulator MnBi2Te4. We find that when the spin-orbit coupling (SOC) is considered, the band structure of MnSb2Te4 in antiferromagnetic (AFM) state has no band inversion at {Gamma}. This is due to the SOC strength of Sb is less than that of Bi. The band inversion can be realized by increasing the SOC of Sb by 0.3 times, which drives MnSb2Te4 from a trivial AFM insulator to an AFM topological insulator (TI) or axion insulator. Uniaxial compressive strain along the layer stacking direction is another way to control the band inversion. The interlayer distance shorten by 5% is needed to drive the similar TPT. For the ferromagnetic (FM) MnSb2Te4 with experimental crystal structure, it is a normal FM insulator. The band inversion can happen when SOC is enhanced by 0.1 times or the interlayer distance is decreased by more than 1%. Thus, FM MnSb2Te4 can be tuned to be the simplest type-I Weyl semimetal with only one pair of Weyl nodes on the three-fold rotational axis. These two Weyl nodes are projected onto (1-10) surface with one Fermi arc connecting them.
Famous for its spin-state puzzle, LaSrCoO$_4$ (Co$^{3+}$) is an intermediate between antiferromagnetic (AFM) La$_2$CoO$_4$ (Co$^{2+}$) and ferromagnetic (FM) Sr$_2$CoO$_4$ (Co$^{4+}$). The appearance of the Co$^{3+}$ valence state (not present in the end compounds) is intriguing because of the spin-state transitions associated with it. In this work, we report two magnetic transitions in LaSrCoO$_4$: (i) a transition at T $=$ T$_c$ $simeq$ 225 K, from the paramagnetic state to a state with an inhomogeneous long-range ferromagnetic (FM) order wherein finite FM clusters coexist with infinite FM matrix in the percolation sense, and (ii) the transition to the cluster spin glass (CSG) state at T $=$ T$_g$ $simeq$ 8 K. Finite FM clusters (which at low temperatures give rise to the cluster spin glass state) and infinite FM matrix are formed due to the spin-spin interactions brought about by the inhomogeneously distributed Co$^{3+}$ high spin (HS) and Co$^{3+}$ low spin (LS) ions. A firm support to the presence of an unconventional (inhomogeneous) ferromagnetic order comes from the anomalous values of the critical exponents $beta$, $gamma$ and $delta$ for the spontaneous magnetization, `zero-field magnetic susceptibility and the critical M - H isotherm, while the coexistence of HS Co$^{3+}$ and LS Co$^{3+}$ ions is confirmed by the results of the extended X-ray absorption fine structure spectroscopy.
Various types of magnetism can appear in emerging quantum materials such as van der Waals layered ones. Here, we report the successful doping of manganese atoms into a post-transition metal dichalcogenide semiconductor: SnSe$_2$. We synthesized a single crystal Sn$_{1-x}$Mn$_x$Se$_{2}$ with $textit{x}$ = 0.04 by the chemical vapor transport (CVT) method and characterized it by x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDS). The magnetic properties indicated a competition between coexisting ferromagnetic and antiferromagnetic interactions, from the temperature dependence of the magnetization, together with magnetic hysteresis loops. This means that magnetic clusters having ferromagnetic interaction within a cluster form and the short-range antiferromagnetic interaction works between the clusters; a spin-glass state appears below ~ 60 K. Furthermore, we confirmed by $textit{ab initio}$ calculations that the ferromagnetic interaction comes from the 3$textit{d}$ electrons of the manganese dopant. Our results offer a new material platform to understand and utilize the magnetism in the van der Waals layered materials.
We report on comprehensive results identifying the ground state of a triangular-lattice structured YbZnGaO$_4$ to be spin glass, including no long-range magnetic order, prominent broad excitation continua, and absence of magnetic thermal conductivity. More crucially, from the ultralow-temperature a.c. susceptibility measurements, we unambiguously observe frequency-dependent peaks around 0.1 K, indicating the spin-glass ground state. We suggest this conclusion to hold also for its sister compound YbMgGaO$_4$, which is confirmed by the observation of spin freezing at low temperatures. We consider disorder and frustration to be the main driving force for the spin-glass phase.
The ac-susceptibility of the electron doped single-layered manganite La$_{1.1}$Sr$_{0.9}$MnO$_4$ is analyzed in detail. A quasi two-dimensional (2$D$) antiferromagnetic (AFM) order with Ising anisotropy is stabilized below $T_N$ $sim$ 80K. We show that below $T_N$, a rare 2$D$ spin-glass (SG) correlation develops with the same Ising anisotropy as the AFM state. Using simple scaling arguments of the droplet model, we derive a scaling form for the ac-susceptibility data of a 2$D$ SG, which our experimental data follows fairly well. Due to simplifications in this 2$D$ case, the proposed scaling form only contains two unknown variables $psi u$ and $tau_0$. Hence, the logarithmic growth law of the SG correlation predicted by the droplet model is convincingly evidenced by the scaling of our experimental data. The origin and nature of this 2$D$ SG state is also discussed.