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Register a new userBroadband optical conductivity of the chiral multifold semimetal PdGa
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We present an optical conductivity study of the multifold semimetal PdGa, performed in a broad spectral range (100 - 20000 cm-1; 12 meV - 2.5 eV) down to T = 10 K. The conductivity at frequencies below 4000 cm-1 is dominated by free carriers while at higher frequencies interband transitions provide the major contribution. The spectra do not demonstrate a significant temperature evolution: only the intraband part changes as a function of temperature with the plasma frequency remaining constant. The interband contribution to the conductivity exhibits a broad peak at around 5500 cm-1 and increases basically monotonously at frequencies above 9000 cm-1. The band-structure-based computations reproduce these features of the interband conductivity and predict its linear-in-frequency behavior as frequency diminishes.
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The optical properties of (001)-oriented NbP single crystals have been studied in a wide spectral range from 6 meV to 3 eV from room temperature down to 10 K. The itinerant carriers lead to a Drude-like contribution to the optical response; we can further identify two pronounced phonon modes and interband transitions starting already at rather low frequencies. By comparing our experimental findings to the calculated interband optical conductivity, we can assign the features observed in the measured conductivity to certain interband transitions. In particular, we find that transitions between the electronic bands spilt by spin-orbit coupling dominate the interband conductivity of NbP below 100 meV. At low temperatures, the momentum-relaxing scattering rate of the itinerant carriers in NbP is very small, leading to macroscopic characteristic length scales of the momentum relaxation of approximately 0.5 $mu$m.
We measured the optical reflectivity of [001]-oriented $n$-doped Cd$_{3}$As$_{2}$ in a broad frequency range (50 - 22000 cm$^{-1}$) for temperatures from 10 to 300 K. The optical conductivity, $sigma(omega) = sigma_{1}(omega) + {rm i}sigma_{2}(omega)$, is isotropic within the (001) plane; its real part follows a power law, $sigma_{1}(omega) propto omega^{1.65}$, in a large interval from 2000 to 8000 cm$^{-1}$. This behavior is caused by interband transitions between two Dirac bands, which are effectively described by a sublinear dispersion relation, $E(k) propto lvert k rvert ^{0.6}$. The momentum-averaged Fermi velocity of the carriers in these bands is energy dependent and ranges from $1.2 times 10^{5}$ to $3 times 10^{5}$ m/s, depending on the distance from the Dirac points. We detect a gaplike feature in $sigma_{1}(omega)$ and associate it with the Fermi level positioned around $100$ meV above the Dirac points.
We measured the reflectivity of the multifold semimetal RhSi in a frequency range from 80 to 20000 cm$^{-1}$ (10 meV - 2.5 eV) at temperatures down to 10 K. The optical conductivity, calculated from the reflectivity, is dominated by the free-carrier (Drude) contribution below 1000 cm$^{-1}$ (120 meV) and by interband transitions at higher frequencies. The temperature-induced changes in the spectra are generally weak: only the Drude bands narrow upon cooling, with an unscreened plasma frequency that is constant with temperature at approximately 1.4 eV, in agreement with a weak temperature dependence of the free-carrier concentration determined by Hall measurements. The interband portion of conductivity exhibits two linear-in-frequency regions below 5000 cm$^{-1}$ ($sim$ 600 meV), a broad flat maximum at around 6000 cm$^{-1}$ (750 meV), and a further increase starting around 10000 cm$^{-1}$ ($sim$ 1.2 eV). We assign the linear behavior of the interband conductivity to transitions between the linear bands near the band crossing points. Our findings are in accord with the predictions for the low-energy conductivity behavior in multifold semimetals and with earlier computations based on band structure calculations for RhSi.
We report the optical conductivity in high-quality crystals of the chiral topological semimetal CoSi, which hosts exotic quasiparticles known as multifold fermions. We find that the optical response is separated into several distinct regions as a function of frequency, each dominated by different types of quasiparticles. The low-frequency intraband response is captured by a narrow Drude peak from a high-mobility electron pocket of double Weyl quasi-particles, and the temperature dependence of the spectral weight is consistent with its Fermi velocity. By subtracting the low-frequency sharp Drude and phonon peaks at low temperatures, we reveal two intermediate quasi-linear inter-band contributions separated by a kink at 0.2 eV. Using Wannier tight-binding models based on first-principle calculations, we link the optical conductivity above and below 0.2 eV to interband transitions near the double Weyl fermion and a threefold fermion, respectively. We analyze and determine the chemical potential relative to the energy of the threefold fermion, revealing the importance of transitions between a linearly dispersing band and a flat band. More strikingly, below 0.1 eV our data are best explained if spin-orbit coupling is included, suggesting that at these energies the optical response is governed by transitions between a previously unobserved four-fold spin-3/2 node and a Weyl node. Our comprehensive combined experimental and theoretical study provides a way to resolve different types of multifold fermions in CoSi at different energy. More broadly our results provide the necessary basis to interpret the burgeoning set of optical and transport experiments in chiral topological semimetals.
Chiral topological semimetals are materials that break both inversion and mirror symmetries. They host interesting phenomena such as the quantized circular photogalvanic effect (CPGE) and the chiral magnetic effect. In this work, we report a comprehensive theoretical and experimental analysis of the linear and non-linear optical responses of the chiral topological semimetal RhSi, which is known to host multifold fermions. We show that the characteristic features of the optical conductivity, which display two distinct quasi-linear regimes above and below 0.4 eV, can be linked to excitations of different kinds of multifold fermions. The characteristic features of the CPGE, which displays a sign change at 0.4 eV and a large non-quantized response peak of around 160 $mu textrm{A V}^{-2}$ at 0.7 eV, are explained by assuming that the chemical potential crosses a flat hole band at the Brillouin zone center. Our theory predicts that, in order to observe a quantized CPGE in RhSi, it is necessary to increase the chemical potential as well as the quasiparticle lifetime. More broadly our methodology, especially the development of the broadband terahertz emission spectroscopy, could be widely applied to study photo-galvanic effects in noncentrosymmetric materials and in topological insulators in a contact-less way and accelerate the technological development of efficient infrared detectors based on topological semimetals.
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