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Register a new userLocalization versus inhomogeneous superfluidity: Submonolayer He-4 on fluorographene, hexagonal boron nitride, and graphene
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Added by
Francesco Ancilotto
Publication date
2021
fields
Physics
and research's language is
English
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We study a sub monolayer He-4 adsorbed on fluorographene (GF) and on hexagonal boron nitride (hBN) at low coverage. The adsorption potentials have been computed ab-initio with a suitable density functional theory including dispersion forces. The properties of the adsorbed He-4 atoms have been computed at finite temperature with path integral Monte Carlo and at T=0 K with variational path integral. From both methods we find that the lowest energy state of He-4 on GF is a superfluid. Due to the very large corrugation of the adsorption potential this superfluid has a very strong spatial anisotropy, the ratio between the largest and smallest areal density being about 6, the superfluid fraction at the lowest T is about 55%, and the temperature of the transition to the normal state is in the range 0.5-1 K. Thus, GF offers a platform for studying the properties of a strongly interacting highly anisotropic bosonic superfluid. At a larger coverage He-4 has a transition to an ordered commensurate state with occupation of 1/6 of the adsorption sites. This phase is stable up to a transition temperature located between 0.5 and 1~K. The system has a triangular order similar to that of He-4 on graphite. The lowest energy state of He-4 on hBN is an ordered commensurate state with occupation of 1/3 of the adsorption sites and triangular symmetry. A disordered state is present at lower coverage as a metastable state. In the presence of an electric field the corrugation of the adsorption potential is slightly increased but up to a magnitude of 1 V/Ang. the effect is small and does not change the stability of the phases of He-4 on GF and hBN. We have verified that also in the case of graphene such electric field does not modify the stability of the commensurate sqrt{3}*sqrt{3}R30 phase.
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We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.
We have derived the adsorption potential of $^4$He atoms on fluorographene (GF), on graphane and on hexagonal boron nitride (hBN) by a recently developed ab initio method that incorporates the van der Waals interaction. The $^4$He monolayer on GF and on hBN is studied by state-of-the-art quantum simulations at T=0 K. With our adsorption potentials we find that in both cases the ground state of $^4$He monolayer is a fluid and not an ordered state with localized atoms as on graphite and on graphene. In the case of GF the present result is in qualitative agreement with the superfluid phase that was obtained using an empirical adsorption potential [M. Nava et al., Phys. Rev. B 86, 174509 (2012)]. This fluid state of $^4$He on GF and on hBN is characterized by a very large density modulation and at the equilibrium density the ratio $Gamma$ between the largest and the smallest local density along the direction of two neighboring adsorption sites and averaged over the perpendicular direction is $Gamma$ = 1.91 for GF and $Gamma$ = 1.65 for hBN. Recent experiments [J. Nyeki et al., Nature Physics 13, 455 (2017)] have discovered a superfluid phase in the second layer $^4$He. This is a spatially modulated superfluid that turns out to have anomalous thermal properties. This gives a strong motivation for an experimental study of monolayer $^4$He on GF and on hBN that we predict to be a superfluid with a much stronger spatial modulation.
Chemically synthesized cove-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V-characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon.
When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of condensed matter physics: from magnetism and dislocations in crystals, to vortices in superconductors, and atomic layers adsorbed on a crystalline surface. Of particular interest might be the properties of topological defects between the two commensurate phases: solitons, domain walls, and dislocation walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotational angle between the two hexagonal lattices, graphene can either stretch to adjust to a slightly different hBN periodicity (the commensurate state found for small rotational angles) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the resulting strain. Such soliton-like objects present significant fundamental interest, and their presence might explain recent observations when the electronic, optical, Raman and other properties of graphene-hBN heterostructures have been notably altered.
We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion energies for different crystallographic stacking configurations and show that the interlayer bonding is due to long-range van der Waals forces. The interplay of elastic and adhesion energies is shown to lead to stacking disorder and moire structures. Band structure calculations reveal substrate induced mass terms in graphene which change their sign with the stacking configuration. The dispersion, absolute band gaps and the real space shape of the low energy electronic states in the moire structures are discussed. We find that the absolute band gaps in the moire structures are at least an order of magnitude smaller than the maximum local values of the mass term. Our results are in agreement with recent STM experiments.
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