No Arabic abstract
The critical resolved shear stress of an Al 4 wt. % Cu alloy containing a homogeneous distribution of $theta$ precipitates was determined by means of dislocation dynamics simulations. The size distribution, shape, orientation and volume fraction of the precipitates in the alloy were obtained from transmission electron microscopy observations while the parameters controlling the dislocation/precipitate interactions (elastic mismatch, transformation strains, dislocation mobility and cross-slip probability, etc.) were calculated from atomistic simulations. The precipitates were assumed to be either impenetrable or shearable by the dislocations, the latter characterized by a threshold shear stress that has to be overcome to shear the precipitate. The predictions of the simulations in terms of the critical resolved shear stress and of the dislocation/precipitate interaction mechanisms were in good agreement with the experimental results. It was concluded that the optimum strength of this alloy is attained with a homogeneous distribution of $theta$ precipitates whose average size ($approx$ 40 nm) is at the transition between precipitate shearing and looping. Overall, the dislocation dynamics strategy presented in this paper is able to provide quantitative predictions of precipitate strengthening in metallic alloys.
The deformation behaviour of the intermetallic Al$_{2}$Cu-phase was investigated using atomistic simulations and micropillar compression, where slip on the unexpected {211} and {022} slip planes was revealed. Additionally, all possible slip systems for the intermetallic phases were further evaluated and a preference for the activation of slip systems based on their effective interplanar distances as well as the effective Burgers vector is proposed. The effective interplanar distance corresponds to the manually determined interplanar distance, whereas the effective Burgers vector takes a potential dislocation dissociation into account. This new order is: {211}1/2<111>, {022}1/2<111> and {022}<100>, {110}<001>, {310}<001>, {022}<011>, {110}1/2<111>, {112}<110> and {112}1/2<111> from high to low ratio of deff/beff. Also, data on the critical resolved shear stresses of several of these slip systems were measured.
Dislocation velocities and mobilities are studied by Molecular Dynamics simulations for edge and screw dislocations in pure aluminum and nickel, and edge dislocations in Al-2.5%Mg and Al-5.0%Mg random substitutional alloys using EAM potentials. In the pure materials, the velocities of all dislocations are close to linear with the ratio of (applied stress)/(temperature) at low velocities, consistent with phonon drag models and quantitative agreement with experiment is obtained for the mobility in Al. At higher velocities, different behavior is observed. The edge dislocation velocity remains dependent solely on (applied stress)/(temperature) up to approximately 1.0 MPa/K, and approaches a plateau velocity that is lower than the smallest forbidden speed predicted by continuum models. In contrast, above a velocity around half of the smallest continuum wave speed, the screw dislocation damping has a contribution dependent solely on stress with a functional form close to that predicted by a radiation damping model of Eshelby. At the highest applied stresses, there are several regimes of nearly constant (transonic or supersonic) velocity separated by velocity gaps in the vicinity of forbidden velocities; various modes of dislocation disintegration and destabilization were also encountered in this regime. In the alloy systems, there is a temperature- and concentration-dependent pinning regime where the velocity drops sharply below the pure metal velocity. Above the pinning regime but at moderate stresses, the velocity is again linear in (applied stress)/(temperature) but with a lower mobility than in the pure metal.
Neutron irradiation tends to promote disorder in ordered alloys through the action of the thermal spikes that it generates, while simultaneously introducing point defects and defect clusters. As they migrate, these point defects will promote reordering of the alloys, acting against irradiation-induced disordering. In this study, classical molecular dynamics and a highly parallel accelerated sampling method are used to study the reordering kinetics of Ni$_3$Al under the diffusion of self-interstitial atoms (SIA). By monitoring the order parameter and potential energy from atomistic simulations, we show that the SIA acts as a reordering agent in Ni$_3$Al. A mean-field rate theory model of the interstitialcy-based reordering kinetics is introduced, which reproduces simulation data and predicts reordering at temperatures as low as 500 K.
Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the ideal tensile and shear strengths of Cu/TiN and Al/TiN interfaces are calculated. While there is a strong orientation relation (OR) preference for Al/TiN interface, there is no OR preference for Cu/TiN interface. Both the ideal tensile and shear strengths of Cu/TiN interfaces are lower than those of bulk Cu and TiN, suggesting such interfaces are weaker than their bulk components. By comparison, the ideal strengths of Al/TiN interface are comparable to the constituents in the bulk form. Such contrasting interfaces can be a test-bed for studying the role of interfaces in determining the mechanical behavior of the nanolayered structures.
Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3). Measurements reveal that photo-excited charge carriers recombine through Pb0 and Pb1 dangling bonds and comparison to precipitate-free material indicates that these are present at both the sample surface and the oxide precipitates. The electronic recombination rates vary approximately linearly with precipitate density. Additional resonance lines arising from iron-boron and interstitial iron are observed and discussed. Our observations are inconsistent with bolometric heating and interpreted in terms of spin-dependent recombination. Electrically detected magnetic resonance is thus a very powerful and sensitive spectroscopic technique to selectively probe recombination centers in modern photovoltaic device materials.