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Register a new userEnhanced Medium Range Order in Vapor Deposited Germania Glasses at Elevated Temperatures
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Glasses are nonequilibrium solids with properties highly dependent on their method of preparation. In vapor-deposited molecular glasses, structural organization could be readily tuned with deposition rate and substrate temperature. Herein, we show the atomic arrangement of strong network forming GeO2 glass is modified at medium range (< 2 nm) through vapor deposition at elevated temperatures. Raman spectral signatures distinctively show the population of 6-membered GeO4 rings increases at elevated substrate temperatures. Deposition near the glass transition temperature is more efficient than post-growth annealing in modifying atomic structure at medium range. The enhanced medium range organization correlates with reduction of the room temperature internal friction. Identifying the microscopic origin of room temperature internal friction in amorphous oxides is paramount to design the next generation interference coatings for mirrors of the end test masses of gravitational wave interferometers, in which the room temperature internal friction is a main source of noise limiting their sensitivity.
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Glass films created by vapor-depositing molecules onto a substrate can exhibit properties similar to those of ordinary glasses aged for thousands of years. It is believed that enhanced surface mobility is the mechanism that allows vapor deposition to create such exceptional glasses, but it is unclear how this effect is related to the final state of the film. Here we use molecular dynamics simulations to model vapor deposition and an efficient Monte Carlo algorithm to determine the deposition rate needed to create ultra-stable glassy films. We obtain a scaling relation that quantitatively captures the efficiency gain of vapor deposition over bulk annealing, and demonstrates that surface relaxation plays the same role in the formation of vapor-deposited glasses as bulk relaxation does in ordinary glass formation.
In-situ NMR spin-lattice relaxation measurements were performed on several vapor deposited ices. The measurements, which span more than 6 orders of magnitude in relaxation times, show a complex spin-lattice relaxation pattern that is strongly dependent on the growth conditions of the sample. The relaxation patterns change from multi-timescale relaxation for samples grown at temperatures below the amorphous-crystalline transition temperature to single exponential recovery for samples grown above the transition temperature. The slow-relaxation contribution seen in cold-grown samples exhibits a temperature dependence, and becomes even slower after the sample is annealed at 200K. The fast-relaxation contribution seen in these samples, does not seem to change or disappear even when heating to temperatures where the sample is evaporated. The possibility that the fast relaxation component is linked to the microporous structures in amorphous ice samples is further examined using an environmental electron scanning microscope. The images reveal complex meso-scale microporous structures which maintain their morphology up to their desorption temperatures. These findings, support the possibility that water molecules at pore surfaces might be responsible for the fast-relaxation contribution. Furthermore, the results of this study indicate that the pore-collapse dynamics observed in the past in amorphous ices using other experimental techniques, might be effectively inhibited in samples which are grown by relatively fast vapor deposition.
Understanding the damping mechanism in finite size systems and its dependence on temperature is a critical step in the development of magnetic nanotechnologies. In this work, nano-sized materials are modeled via atomistic spin dynamics, the damping parameter being extracted from Ferromagnetic Resonance (FMR) simulations applied for FePt systems, generally used for heat-assisted magnetic recording media (HAMR). We find that the damping increases rapidly close to Tc and the effect is enhanced with decreasing system size, which is ascribed to scattering at the grain boundaries. Additionally, FMR methods provide the temperature dependence of both damping and the anisotropy, important for the development of HAMR. Semi-analytical calculations show that, in the presence of a grain size distribution, the FMR linewidth can decrease close to the Curie temperature due to a loss of inhomogeneous line broadening. Although FePt has been used in this study, the results presented in the current work are general and valid for any ferromagnetic material.
Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60 to 70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size.
Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study on the GB structures in CVD-grown polycrystalline h-BN monolayer films by transmission electron microscope. Interestingly, most of these GBs are revealed to be formed via overlapping between neighboring grains, which are distinct from the covalently bonded GBs as commonly observed in other 2D materials. Further density functional theory (DFT) calculations show that the hydrogen plays an essential role in overlapping GB formation. This work provides an in-depth understanding of the microstructures and formation mechanisms of GBs in CVD-grown h-BN films, which should be informative in guiding the precisely controlled synthesis of large area single crystalline h-BN and other 2D materials.
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