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Register a new userViscous magnetotransport and Gurzhi effect in bilayer electron system
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We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.
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A hydrodynamic flow of electrons driven by an oscillating electric field is investigated. It is found that a double-peak profile of the electric current can appear. Such a profile originates from the interplay of viscous and inertial properties of the electron fluid as well as the boundary conditions. The nontrivial profile of the current results in a characteristic stray magnetic field where peaks could also occur in one of the field components. Analytical results are supported by numerical calculations in samples of different geometries such as straight channel, nozzle, and cavity and are found to be qualitatively insensitive to a specific form of the oscillating electric field. In addition, it is shown that nozzle and cavity provide an efficient means to locally enhance or reduce the fluid velocity.
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