The critical thickness constitutes a vital parameter in heterostructure epitaxy engineering as it determines the limit where crystal coherency is lost. By finite element modeling of the total strain relaxation in finite size heterostructure nanowires, we show that the equilibrium configuration changes abruptly at the critical thickness from a fully elastically strained structure to a structure with a network of MDs. We show how the interdependent MD relaxation changes as a function of the lattice mismatch. These findings suggest that a collective formation of MDs takes place when the growing heterostructure layer exceeds the critical thickness.
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are however, not well understood. We report on a pronounced thickness dependence of the parasitic channel formation at AlN/Si interfaces due to increased surface acceptor densities at the interface in silicon. The origin of these surface acceptors is analyzed using secondary ion mass spectroscopy measurements and traced to thermal acceptor formation due to Si-O-N complexes. Low-temperature (5K) magneto-resistance (MR) data reveals a transition from positive to negative MR with increasing AlN film thickness indicating the presence of an inversion layer of electrons which also contributes to parasitic channel formation but whose contribution is secondary at room temperatures.
The experimental x-ray diffraction patterns of a Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60$^circ$ dislocations with dislocations arranged in bunches is needed to explain the experiment correctly. As a result of the dislocation bunching, the positions of the x-ray diffraction peaks do not correspond to the average dislocation density but reveal less than a half of the actual relaxation.
Hydrogen arranges at dislocations in palladium to form nanoscale hydrides, changing the vibrational spectra. An ab initio hydrogen potential energy model versus Pd neighbor distances allows us to predict the vibrational excitations for H from absolute zero up to room temperature adjacent to a partial dislocation and with strain. Using the equilibrium distribution of hydrogen with temperature, we predict excitation spectra to explain new incoherent inelastic neutron-scattering measurements. At 0K, dislocation cores trap H to form nanometer-sized hydrides, while increased temperature dissolves the hydrides and disperses H throughout bulk Pd.
Novel properties arising at interfaces between transition metal oxides, particularly the conductivity at the interface of LaAlO3 (LAO) and SrTiO3 (STO) band insulators, have generated new paradigms, challenges, and opportunities in condensed matter physics. Conventional transport measurements have established that intrinsic conductivity appears in LAO/STO interfaces when the LAO film matches or exceeds a critical thickness of 4 unit cells (uc). Recently, a number of experiments raise important questions about the role of the LAO film, the influence of photons, and the effective differences between vacuum/STO and LAO/STO, both above and below the standard critical thickness. Here, using angle-resolved photoemission spectroscopy (ARPES) on in situ prepared samples, as well as resonant inelastic x-ray scattering (RIXS), we study how the metallic STO surface state evolves during the growth of a crystalline LAO film. In all the samples, the character of the conduction bands, their carrier densities, the Ti3+ crystal fields, and the responses to photon irradiation bear strong similarities. However, LAO/STO interfaces exhibit intrinsic instability toward in-plane folding of the Fermi surface at and above the 4-uc thickness threshold. This ordering distinguishes these heterostructures from bare STO and sub-critical-thickness LAO/STO and coincides with the onset of unique properties such as magnetism and built-in conductivity.
As circuitry approaches single nanometer length scales, it is important to predict the stability of metals at these scales. The behavior of metals at larger scales can be predicted based on the behavior of dislocations, but it is unclear if dislocations can form and be sustained at single nanometer dimensions. Here, we report the formation of dislocations within individual 3.9 nm Au nanocrystals under nonhydrostatic pressure in a diamond anvil cell. We used a combination of x-ray diffraction, optical absorbance spectroscopy, and molecular dynamics simulation to characterize the defects that are formed, which were found to be surface-nucleated partial dislocations. These results indicate that dislocations are still active at single nanometer length scales and can lead to permanent plasticity.