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Register a new userInterfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO$_3$
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The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO$_3$, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO$_3$ substrate might contribute to the enhanced superconducting pairing temperature. Alternatively, it has also been recently proposed that such replica bands might instead originate from extrinsic final state losses associated with the photoemission process. Here, we perform a quantitative examination of replica bands in monolayer FeSe/SrTiO$_3$, where we are able to conclusively demonstrate that the replica bands are indeed signatures of intrinsic electron-boson coupling, and not associated with final state effects. A detailed analysis of the energy splittings between the higher-order replicas, as well as other self-energy effects, allow us to determine that the interfacial electron-phonon coupling in the system corresponds to a value of $lambda = 0.19 pm 0.02$.
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We compare electronic structures of single FeSe layer films on SrTiO$_3$ substrate (FeSe/STO) and K$_x$Fe$_{2-y}$Se$_{2}$ superconductors obtained from extensive LDA and LDA+DMFT calculations with the results of ARPES experiments. It is demonstrated that correlation effects on Fe-3d states are sufficient in principle to explain the formation of the shallow electron -- like bands at the M(X)-point. However, in FeSe/STO these effects alone are apparently insufficient for the simultaneous elimination of the hole -- like Fermi surface around the $Gamma$-point which is not observed in ARPES experiments. Detailed comparison of ARPES detected and calculated quasiparticle bands shows reasonable agreement between theory and experiment. Analysis of the bands with respect to their origin and orbital composition shows, that for FeSe/STO system the experimentally observed replica quasiparticle band at the M-point (usually attributed to forward scattering interactions with optical phonons in SrTiO$_3$ substrate) can be reasonably understood just as the LDA calculated Fe-3d$_{xy}$ band, renormalized by electronic correlations. The only manifestation of the substrate reduces to lifting the degeneracy between Fe-3d$_{xz}$ and Fe-3d$_{yz}$ bands in the vicinity of M-point. For the case of K$_x$Fe$_{2-y}$Se$_{2}$ most bands observed in ARPES can also be understood as correlation renormalized Fe-3d LDA calculated bands, with overall semi -- quantitative agreement with LDA+DMFT calculations.
The zone-center $E_{2g}$ modes play a crucial role in MgB$_2$, controlling the scattering mechanisms in the normal state as well the superconducting pairing. Here, we demonstrate via first-principles quantum-field theory calculations that, due to the anisotropic electron-phonon interaction, a $hot$-$phonon$ regime where the $E_{2g}$ phonons can achieve significantly larger effective populations than other modes, is triggered in MgB$_2$ by the interaction with an ultra-short laser pulse. Spectral signatures of this scenario in ultrafast pump-probe Raman spectroscopy are discussed in detail, revealing also a fundamental role of nonadiabatic processes in the optical features of the $E_{2g}$ mode.
Ultrathin FeSe films grown on SrTiO$_{3}$ substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. Using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO$_{3}$ films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump-probe delay for 1 unit cell, 3 unit cell, and 60 unit cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00(2) to 5.25(2) THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A$_textrm{1g}$ phonon. The dominant mechanism for the phonon softening in 1 unit cell thick FeSe films is a substrate-induced lattice strain. Our results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.
We report the angular dependence of magnetoresistance in two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface. We find that this interfacial magnetoresistance exhibits a similar angular dependence to the spin Hall magnetoresistance observed in ferromagnet/heavy metal bilayers, which has been so far discussed in the framework of bulk spin Hall effect of heavy metal layer. The observed magnetoresistance is in qualitative agreement with theoretical model calculation including both Rashba spin-orbit coupling and exchange interaction. Our result suggests that magnetic interfaces subject to spin-orbit coupling can generate a nonnegligible contribution to the spin Hall magnetoresistance and the interfacial spin-orbit coupling effect is therefore key to the understanding of various spin-orbit-coupling-related phenomena in magnetic/non-magnetic bilayers.
Dirac semimetal PdTe2 single-crystal temperature-dependent ultrafast carrier and phonon dynamics were studied using ultrafast optical pump-probe spectroscopy. Two distinct carrier and coherent phonons relaxation processes were identified in the 5 K - 300 K range. Quantitative analysis revealed a fast relaxation process ({tau}_f) occurring on a subpicosecond time scale which originated from electron-phonon thermalization. This was followed by a slower relaxation process ({tau}_s) with a time scale of ~ 7-9.5 ps which originated from phonon-assisted electron-hole recombination. Two significant vibrational modes resolved at all measured temperatures and corresponded to Te atoms in-plane (E_g), and out-of-plane (A_1g), motion. As temperature increased both phonon modes softened markedly. A_1g mode frequency monotonically decreased as temperature increased. Its damping rate remained virtually unchanged. As expected, E_g decreased uniformly as temperatures rose. At temperatures above 80 K, there was insignificant change. Test results suggested that pure dephasing played an important role in the relaxation processes. PdTe2 phonon is thought responsible for its superconductive properties. Examining phonons behavior should improve the understanding of its complex superconductivity.
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