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Register a new userA General Approach to High Efficiency Perovskite Solar Cells by Any Antisolvent
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Deposition of perovskite thin films by antisolvent engineering is one of the most common methods employed in perovskite photovoltaics research. Herein, we report on a general method that allows the fabrication of highly efficient perovskite solar cells by any antisolvent via the manipulation of the antisolvent application rate. Through a detailed structural, compositional and microstructural characterization of perovskite layers fabricated by 14 different antisolvents, we identify two key factors that influence the quality of the perovskite active layer: the solubility of the organic precursors in the antisolvent and its miscibility with the host solvent(s) of the perovskite precursor solution. Depending on these two factors, each antisolvent can be utilized to produce high performance devices reaching power conversion efficiencies (PCEs) that exceed 21%. Moreover, we demonstrate that by employing the optimal antisolvent application procedure, highly efficient solar cells can be fabricated from a broad range of precursor stoichiometries, with either a significant excess or deficiency of organic iodides.
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The spin-split indirect bandgap in hybrid-halide perovskites provides a momentum-space realisation of a photon-ratchet intermediate band. Excited electrons thermalise to recombination-protected Rashba pockets offset in momentum space, building up the charge density to have sufficient flux to the higher lying conduction band. This effect could be used to form an intrinsic intermediate band solar cell with efficiencies beyond the Shockley-Queisser limit if a selective low-electron affinity contact can be made to the higher conduction state. This concept is supported by analysis of the many-body electronic structure. Production of above-bandgap voltages under illumination would affirm the physical mechanism proposed here.
The performance of organometallic perovskite solar cells has rapidly surpassed that of both conventional dye-sensitised and organic photovoltaics. High power conversion efficiency can be realised in both mesoporous and thin-film device architectures. We address the origin of this success in the context of the materials chemistry and physics of the bulk perovskite as described by electronic structure calculations. In addition to the basic optoelectronic properties essential for an efficient photovoltaic device (spectrally suitable band gap, high optical absorption, low carrier effective masses), the materials are structurally and compositionally flexible. As we show, hybrid perovskites exhibit spontaneous electric polarisation; we also suggest ways in which this can be tuned through judicious choice of the organic cation. The presence of ferroelectric domains will result in internal junctions that may aid separation of photoexcited electron and hole pairs, and reduction of recombination through segregation of charge carriers. The combination of high dielectric constant and low effective mass promotes both Wannier-Mott exciton separation and effective ionisation of donor and acceptor defects. The photoferroic effect could be exploited in nanostructured films to generate a higher open circuit voltage and may contribute to the current-voltage hysteresis observed in perovskite solar cells.
Fundamental electronic processes such as charge-carrier transport and recombination play a critical role in determining the efficiency of hybrid perovskite solar cells. The presence of mobile ions complicates the development of a clear understanding of these processes as the ions may introduce exceptional phenomena such as hysteresis or giant dielectric constants. As a result, the electronic landscape, including its interaction with mobile ions, is difficult to access both experimentally and analytically. To address this challenge, we applied a series of small perturbation techniques including impedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy (IMPS) and intensity-modulated photovoltage spectroscopy (IMVS) to planar $mathrm{MAPbI_3}$ perovskite solar cells. Our measurements indicate that both electronic as well as ionic responses can be observed in all three methods and assigned by literature comparison. The results reveal that the dominant charge-carrier loss mechanism is surface recombination by limitation of the quasi-Fermi level splitting. The interaction between mobile ions and the electronic charge carriers leads to a shift of the apparent diode ideality factor from 0.74 to 1.64 for increasing illumination intensity, despite the recombination mechanism remaining unchanged.
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methylammonium mixed bromide-iodide lead perovskite, CH3NH3PbI3(1-x)Br3x (0 < x < 1), top sub-cell and a single-crystalline silicon bottom sub-cell. A Si-based tunnel junction connects the two sub-cells. Numerical simulations are based on a one-dimensional numerical drift-diffusion model. It is shown that a top cell absorbing material with 20% of bromide and a thickness in the 300-400 nm range affords current matching with the silicon bottom cell. Good interconnection between single cells is ensured by standard n and p doping of the silicon at 5.10^19cm-3 in the tunnel junction. A maximum efficiency of 27% is predicted for the tandem cell, exceeding the efficiencies of stand-alone silicon (17.3%) and perovskite cells (17.9%) taken for our simulations, and more importantly, that of the record crystalline Si cells.
Here we use time-resolved and steady-state optical spectroscopy on state-of-the-art low- and high-bandgap perovskite films for tandems to quantify intrinsic recombination rates and absorption coefficients. We apply these data to calculate the limiting efficiency of perovskite-silicon and all-perovskite two-terminal tandems employing currently available bandgap materials as 42.0 % and 40.8 % respectively. By including luminescence coupling between sub-cells, i.e. the re-emission of photons from the high-bandgap sub-cell and their absorption in the low-bandgap sub-cell, we reveal the stringent need for current matching is relaxed when the high-bandgap sub-cell is a luminescent perovskite compared to calculations that do not consider luminescence coupling. We show luminescence coupling becomes important in all-perovskite tandems when charge carrier trapping rates are < 10$^{6}$ s$^{-1}$ (corresponding to carrier lifetimes longer than 1 ${mu}$s at low excitation densities) in the high-bandgap sub-cell, which is lowered to 10$^{5}$ s$^{-1}$ in the better-bandgap-matched perovskite-silicon cells. We demonstrate luminescence coupling endows greater flexibility in both sub-cell thicknesses, increased tolerance to different spectral conditions and a reduction in the total thickness of light absorbing layers. To maximally exploit luminescence coupling we reveal a key design rule for luminescent perovskite-based tandems: the high-bandgap sub-cell should always have the higher short-circuit current. Importantly, this can be achieved by reducing the bandgap or increasing the thickness in the high-bandgap sub-cell with minimal reduction in efficiency, thus allowing for wider, unstable bandgap compositions (>1.7 eV) to be avoided. Finally, we experimentally visualise luminescence coupling in an all-perovskite tandem device stack through cross-section luminescence images.
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