No Arabic abstract
In nearly compensated graphene, disorder-assisted electron-phonon scattering or supercollisions are responsible for both quasiparticle recombination and energy relaxation. Within the hydrodynamic approach, these processes contribute weak decay terms to the continuity equations at local equilibrium, i.e., at the level of ideal hydrodynamics. Here we report the derivation of the decay term due to weak violation of energy conservation. Such terms have to be considered on equal footing with the well-known recombination terms due to nonconservation of the number of particles in each band. At high enough temperatures in the hydrodynamic regime supercollisions dominate both types of the interaction). We also discuss the contribution of supercollisions to the heat transfer equation (generalizing the continuity equation for the energy density in viscous hydrodynamics).
Collective behavior is one of the most intriguing aspects of the hydrodynamic approach to electronic transport. Here we provide a consistent, unified calculation of the dispersion relations of the hydrodynamic collective modes in graphene. Taking into account viscous effects, we show that the hydrodynamic sound mode in graphene becomes overdamped at sufficiently large momentum scales. Extending the linearized theory beyond the hydrodynamic regime, we connect the diffusive hydrodynamic charge density fluctuations with plasmons.
We report interlayer electronic transport in CaMnBi$_{2}$ single crystals. Quantum oscillations and angular magnetoresistance suggest coherent electronic conduction and valley polarized conduction of Dirac states. Small cyclotron mass, large mobility of carriers and nontrivial Berrys phase are consistent with the presence of Dirac fermions on the side wall of the warped cylindrical Fermi surface. Similar to SrMnBi$_{2}$ that features an anisotropic Dirac cone, our results suggest that magnetic field-induced changes in the interlayer conduction are also present in layered bismuth-based materials with zero-energy line in momentum space created by the staggered alkaline earth atoms.
Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns has opened new vistas in the topological materials landscape. Here we report on evidence, obtained by combining thermodynamic measurements, local and non-local transport measurements, and theoretical calculations, that robust topologically non-trivial, valley Chern insulators occur at charge neutrality in twisted double-bilayer graphene (TDBG). These time reversal-conserving valley Chern insulators are enabled by valley-number conservation, a symmetry that emerges from the moire pattern. The thermodynamic gap extracted from chemical potential measurements proves that TDBG is a bulk insulator under transverse electric field, while transport measurements confirm the existence of conducting edge states. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering and demonstrate that it does not destroy the edge states, leaving the bulk-boundary correspondence largely intact.
Motivated by the increasing number of systems featuring multiple bands at low energy, we address the Boltzmann approach to transport in a multiband weakly disordered non-interacting crystal subject to a small electric field. In general, the multiband structure leads to a considerable complication of the Boltzmann equation. Indeed, even in the presence of elastic impurity scattering one needs to compute for each band and momentum the dressed velocities, which account for scattering events. Here we provide a semi-analytical solution to the Boltzmann equation that reduces such a challenging numerical task to the much simpler numerical computation of a small tensor whose dimension is set by the number of bands at the Fermi level. This approach further allows us to discuss the interplay of symmetry and disorder for different impurity types, including those originating from random-matrix Wigner ensembles. As an example of application we consider the 2D isotropic Rashba metal and we discuss, in a full analytical fashion, how different types of disorder may break the exactness of the relaxation-time approximation and induce transport anisotropy, and may allow one to identify the presence of spin-orbit coupling as deviations of the conductivity from Drude behavior.
We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t$ (in-plane) and $gamma_{4}$ (inter-layer), and the on-site energy $Delta$.