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Register a new userThermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates
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Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature $T_e$ of the films as a function of Joule power per unit of area $P_{2D}$. In all samples, we observe the dependence $P_{2D}propto T_e^n$ with the exponent $nsimeq 2$, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of $P_{2D}(T_e)$ on the length of the amorphous insulating layer is consistent with the linear $T$-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentration. This stable and low thermal conductivity facilitates excellent performance for applications such as memristors.
Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they exhibit wrinkling. The formation of wrinkles is a key signature of strain distribution in a film. Raman imaging has been utilized to study the residual strain distribution in these wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness has been observed. To find whether the residual lattice strain in the films can be removed by a thermal treatment, temperature dependent Raman measurements of these films are carried out. The study demonstrates that the thermal rate of strain evolution is higher in the films of lower thickness than in the thicker films. This observation further provides a possible explanation for the variation of strain in the as-grown films. An empirical relation has been proposed for estimating the residual strain from the morphology of the films. We have also shown that the residual strain can be partially released by the delamination of the films.
The magnetization processes in binary magnetic/nonmagnetic amorphous alloy Hf_{57}Fe_{43} are investigated by the detailed measurements of magnetic hysteresis loops, temperature dependence of magnetization, relaxation of magnetization and magnetic ac susceptibility, including a nonlinear term. Blocking of magnetic moments at lower temperatures is accompanied with the slow relaxation of magnetization and magnetic hysteresis loops. All of the observed properties are explained with the superparamagnetic behaviour of the single domain magnetic clusters inside the nonmagnetic host, their blocking by the anisotropy barriers and thermal fluctuation over the barriers accompanied by relaxation of magnetization. From magnetic viscosity analysis based on thermal relaxation over the anisotropy barriers it is found out that magnetic clusters occupy the characteristic volume from 25 up to 200 nm3 . The validity of the superparamagnetic model of Hf_{57}Fe_{43} is based on the concentration of iron in the Hf_{100-x}Fe_{43} system that is just below the threshold for the long range magnetic ordering. This work throws more light on magnetic behaviour of other amorphous alloys, too.
Time-resolved magneto-optics was used to study spin-lattice relaxation dynamics in thin epitaxial La0.7Sr0.3MnO3 films. Two distinct recovery regimes of the ferromagnetic order can be resolved upon photoexcitation, which manifest themselves by two different relaxation times. A pump pulse energy independent spin-lattice relaxation time can be deduced. Due to a weak spin-orbit coupling in manganites this spin-lattice relaxation time is much longer than in ferromagnetic metals. Heat flow into the substrate sets the ultimate recovery speed of the ferromagnetic order and allows for a determination of heat diffusion properties of manganite films.
We observe a crossover from electron-phonon (ep) coupling limited energy relaxation to that governed by thermal boundary resistance (pp) in copper films at sub-kelvin temperatures. Our measurement yields a quantitative picture of heat currents, in terms of temperature dependences and magnitudes, in both ep and pp limited regimes, respectively. We show that by adding a third layer in between the copper film and the substrate, the thermal boundary resistance is increased fourfold, consistent with an assumed series connection of thermal resistances.
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