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Universal Critical Exponents of the Magnetic Domain Wall Depinning Transition

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 Publication date 2021
  fields Physics
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Magnetic field driven domain wall dynamics in a ferrimagnetic GdFeCo thin film with perpendicular magnetic anisotropy is studied using low temperature magneto-optical Kerr microscopy. Measurements performed in a practically athermal condition allow for the direct experimental determination of the velocity ($ beta = 0.30 pm 0.03 $) and correlation length ($ u = 1.3 pm 0.3 $) exponents of the depinning transition. The whole family of exponents characterizing the transition is deduced, providing evidence that the depinning of magnetic domain walls is better described by the quenched Edwards-Wilkinson universality class.



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We explore universal behaviors of magnetic domain wall driven by the spin-transfer of an electrical current, in a ferromagnetic (Ga,Mn)(As,P) thin film with perpendicular magnetic anisotropy. For a current direction transverse to domain wall, the dynamics of the thermally activated creep regime and the depinning transition are found to be compatible with a self-consistent universal description of magnetic field induced domain wall dynamics. This common universal behavior, characteristic of the so-called quenched Edwards-Wilkinson universality class, is confirmed by a complementary and independent analysis of domain wall roughness. However, the tilting of domain walls and the formation of facets is produced by the directionality of interaction with the current, which acts as a magnetic field only in the direction transverse to domain wall.
168 - X. P. Qin , B. Zheng , N. J. Zhou 2012
With Monte Carlo methods, we investigate the universality class of the depinning transition in the two-dimensional Ising model with quenched random fields. Based on the short-time dynamic approach, we accurately determine the depinning transition field and both static and dynamic critical exponents. The critical exponents vary significantly with the form and strength of the random fields, but exhibit independence on the updating schemes of the Monte Carlo algorithm. From the roughness exponents $zeta, zeta_{loc}$ and $zeta_s$, one may judge that the depinning transition of the random-field Ising model belongs to the new dynamic universality class with $zeta eq zeta_{loc} eq zeta_s$ and $zeta_{loc} eq 1$. The crossover from the second-order phase transition to the first-order one is observed for the uniform distribution of the random fields, but it is not present for the Gaussian distribution.
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Disordered non-interacting systems in sufficiently high dimensions have been predicted to display a non-Anderson disorder-driven transition that manifests itself in the critical behaviour of the density of states and other physical observables. Recently the critical properties of this transition have been extensively studied for the specific case of Weyl semimetals by means of numerical and renormalisation-group approaches. Despite this, the values of the critical exponents at such a transition in a Weyl semimetal are currently under debate. We present an independent calculation of the critical exponents using a two-loop renormalisation-group approach for Weyl fermions in $2-varepsilon$ dimensions and resolve controversies currently existing in the literature.
Using multiscaling analysis, we compare the characteristic roughening of ferroelectric domain walls in PZT thin films with numerical simulations of weakly pinned one-dimensional interfaces. Although at length scales up to a length scale greater or equal to 5 microns the ferroelectric domain walls behave similarly to the numerical interfaces, showing a simple mono-affine scaling (with a well-defined roughness exponent), we demonstrate more complex scaling at higher length scales, making the walls globally multi-affine (varying roughness exponent at different observation length scales). The dominant contributions to this multi-affine scaling appear to be very localized variations in the disorder potential, possibly related to dislocation defects present in the substrate.
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