No Arabic abstract
The velocity of dislocations is derived analytically to incorporate and predict the intriguing effects induced by the preferential solute segregation and Cottrell atmospheres in both two-dimensional and three-dimensional binary systems of various crystalline symmetries. The corresponding mesoscopic description of defect dynamics is constructed through the amplitude formulation of the phase-field crystal model which has been shown to accurately capture elasticity and plasticity in a wide variety of systems. Modifications of the Peach-Koehler force as a result of solute concentration variations and compositional stresses are presented, leading to interesting new predictions of defect motion due to effects of Cottrell atmospheres. These include the deflection of dislocation glide paths, the variation of climb speed and direction, and the change or prevention of defect annihilation, all of which play an important role in determining the fundamental behaviors of complex defect network and dynamics. The analytic results are verified by numerical simulations.
A pearls distinguished beauty and toughness are attributable to the periodic stacking of aragonite tablets known as nacre. Nacre has naturally occurring mesoscale periodicity that remarkably arises in the absence of discrete translational symmetry. Gleaning the inspiring biomineral design of a pearl requires quantifying its structural coherence and understanding the stochastic processes that influence formation. By characterizing the entire structure of pearls (~3 mm) in cross-section at high resolution, we show nacre has medium-range mesoscale periodicity. Self-correcting growth mechanisms actively remedy disorder and topological defects of the tablets and act as a countervailing process to long-range disorder. Nacre has a correlation length of roughly 16 tablets (~5.5 um) despite persistent fluctuations and topological defects. For longer distances (> 25 tablets, ~8.5 um), the frequency spectrum of nacre tablets follows f^(-1.5) behavior suggesting growth is coupled to external stochastic processes-a universality found across disparate natural phenomena which now includes pearls.
Strain-induced lattice mismatch leads to moir{e} patterns in homobilayer transition metal dichalcogenides (TMDs). We investigate the structural and electronic properties of such strained moir{e} patterns in TMD homobilayers. The moir{e} patterns in strained TMDs consist of several stacking domains which are separated by tensile solitons. Relaxation of these systems distributes the strain unevenly in the moir{e} superlattice, with the maximum strain energy concentrating at the highest energy stackings. The order parameter distribution shows the formation of aster topological defects at the same sites. In contrast, twisted TMDs host shear solitons at the domain walls, and the order parameter distribution in these systems shows the formation of vortex defects. The strained moir{e} systems also show the emergence of several well-separated flat bands at both the valence and conduction band edges, and we observe a significant reduction in the band gap. The flat bands in these strained moir{e} superlattices provide platforms for studying the Hubbard model on a triangular lattice as well as the ionic Hubbard model on a honeycomb lattice. Furthermore, we study the localization of the wave functions corresponding to these flat bands. The wave functions localize at different stackings compared to twisted TMDs, and our results are in excellent agreement with recent spectroscopic experiments [1].
A theoretical study on the dynamics of an antiferromagnetic (AFM) skyrmion is indispensable for revealing the underlying physics and understanding the numerical and experimental observations. In this work, we present a reliable theoretical treatment of the spin current induced motion of an AFM skyrmion in the absence and presence of pinning defect. For an ideal AFM system free of defect, the skyrmion motion velocity as a function of the intrinsic parameters can be derived, based on the concept that the skyrmion profile agrees well with the 360 domain wall formula, leading to an explicit description of the skyrmion dynamics. However, for an AFM lattice containing a defect, the skyrmion can be pinned and the depinning field as a function of damping constant and pinning strength can be described by the Thiele approach. It is revealed that the depinning behavior can be remarkably influenced by the time dependent oscillation of the skyrmion trajectory. The present theory provides a comprehensive scenario for manipulating the dynamics of AFM skyrmion, informative for future spintronic applications based on antiferromagnets.
The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray diffraction and cathodoluminescence (CL) spectroscopy as well as by spatially resolved CL and energy dispersive x-ray analysis. The CL investigations confirm a process of strain relaxation accompanied by an increasing indium content toward the surface of the (In,Ga)N layer, which is known as the compositional pulling effect. Moreover, we identify the strained bottom, unstrained top, and gradually relaxed intermediate region of the (In,Ga)N layer. In addition to an increase of the indium content along the growth direction, the strain relaxation leads to an enhancement of the lateral variations of the indium distribution toward the surface.
Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.