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Register a new userMagnetic field-induced thermal emission tuning of InSb-based metamaterials in the terahertz frequency regime
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This work theoretically and analytically demonstrates the magnetic field-induced spectral radiative properties of photonic metamaterials incorporating both Indium Antimonide (InSb) and Tungsten (W) in the terahertz (THz) frequency regime. We have varied multiple factors of the nanostructures, including composite materials, layer thicknesses and surface grating fill factors, which impact the light-matter interactions and in turn modify the thermal emission of the metamaterials. We have proposed and validated a method for determining the spectral properties of InSb under an applied direct current (DC) magnetic field, and have employed this method to analyze how these properties can be dynamically tuned by modulating the magnitude of the field. For the first time, we have designed an InSb-W metamaterial exhibiting unity narrowband emission which can serve as an emitter for wavelengths around 55 $mu$m (approximately 5.5 THz). Additionally, the narrowband emission of this metamaterial can be magnetically tuned in both bandwidth and peak wavelength with a normal emissivity close to unity.
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Plasmon induced transparency (PIT) effect in a terahertz graphene metamaterial is numerically and theoretically analyzed. The proposed metamaterial comprises of a pair of graphene split ring resonators placed alternately on both sides of a graphene strip of nanometer scale. The PIT effect in the graphene metamaterial is studied for different vertical and horizontal configurations. Our results reveal that there is no PIT effect in the graphene metamaterial when the centers of both the split ring resonators and the graphene strip are collinear to each other. This is a noteworthy feature, as the PIT effect does not vanish for similar configuration in a metal-based metamaterial structure. We have further shown that the PIT effect can be tuned by varying the Fermi energy of graphene layer. A theoretical model using the three level plasmonic system is established in order to validate the numerical results. Our studies could be significant in designing graphene based frequency agile ultra-thin devices for terahertz applications.
We report an experimental demonstration of thermal tuning of resonance frequency in a planar terahertz metamaterial consisting of a gold split-ring resonator array fabricated on a bulk single crystal strontium titanate (SrTiO3) substrate. Cooling the metamaterial starting from 409 K down to 150 K causes about 50% shift in resonance frequency as compare to its room temperature resonance, and there is very little variation in resonance strength. The resonance shift is due to the temperature-dependent refractive index (or the dielectric constant) of the strontium titanate. The experiment opens up avenues for designing tunable terahertz devices by exploiting the temperature sensitive characteristic of high dielectric constant substrates and complex metal oxide materials.
Contrary to what might be expected, when an organic dye is sputtered onto an opaque holey metal film, transmission bands can be observed at the absorption energies of the molecules. This phenomenon, known as absorption-induced transparency, is aided by a strong modification of the propagation properties of light inside the holes when filled by the molecules. Despite having been initially observed in metallic structures in the optical regime, new routes for investigation and applications at different spectral regimes can be devised. Here, in order to illustrate the potential use of absorption induced transparency at terahertz, a method for molecular detection is presented, supported by a theoretical analysis.
We investigate optically reconfigurable dielectric metamaterials at gigahertz frequencies. More precisely, we study the microwave response of a subwavelength grating optically imprinted into a semiconductor slab. In the homogenized regime, we analytically evaluate the ordinary and extraordinary component of the effective permittivity tensor by taking into account the photo-carrier dynamics described by the ambipolar diffusion equation. We analyze the impact of semiconductor parameters on the gigahertz metamaterial response which turns out to be highly reconfigurable by varying the photogenerated grating and which can show a marked anisotropic behavior.
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$mu A$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $beta simeq $ 78 and a minimum turn-on field $E_{ON} simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($beta <$ 60) and increased turn-on field ($E_{ON} simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.
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