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Register a new userObservation of a Tunable Isolated Dirac Point in $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$
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Novel topological devices require the isolation of topological surface states from trivial bulk states for electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of x values, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectroscopy (ARPES). We track the evolution of the bulk and surface state band structure for different values of x from 1 to 0.4. Our results show that the system remains topologically non-trivial down to x = 0.4, extending the range predicted by previous computational studies. Importantly, we find that the Dirac point crosses the Fermi energy near x = 0.65. Our observation of a tunable Dirac point which crosses into the topological transport regime can be important for topological spintronics applications.
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In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement the first material system where the roles are reversed, and the TSS form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI $(Bi_{1-x}In_{x})_{2}Se_{3}$ in between two layers of the TI $Bi_2Se_3$ using the atomically-precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the $(Bi_{1-x}In_{x})_{2}Se_{3}$ layer and show that this tunes the coupling between the TI layers from strongly-coupled metallic to weakly-coupled, and finally to a fully-decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.
We present angle resolved photoemission experiments and scanning tunneling spectroscopy results on the doped topological insulator Cu0.2Bi2Te3. Quasi-particle interference (QPI) measurements, based on high resolution conductance maps of the local density of states show that there are three distinct energy windows for quasi-particle scattering. Using a model Hamiltonian for this system two new scattering channels are identified: the first between the surface states and the conduction band and the second between conduction band states. We also observe that the real space density modulation has a predominant three-fold symmetry, which rules out a simple, isotropic impurity potential. We obtain agreement between experiment and theory by considering a modified scattering potential that is consistent with having mostly Bi-Te anti-site defects as scatterers.
Bulk superconductivity has been discovered in Tl_{0.6}Bi_{2}Te_{3}, which is derived from the topological insulator Bi2Te3. The superconducting volume fraction of up to 95% (determined from specific heat) with Tc of 2.28 K was observed. The carriers are p-type with the density of ~1.8 x 10^{20} cm^{-3}. Resistive transitions under magnetic fields point to an unconventional temperature dependence of the upper critical field B_{c2}. The crystal structure appears to be unchanged from Bi2Te3 with a shorter c-lattice parameter, which, together with the Rietveld analysis, suggests that Tl ions are incorporated but not intercalated. This material is an interesting candidate of a topological superconductor which may be realized by the strong spin-orbit coupling inherent to topological insulators.
The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses non-trivial band topology with intrinsic antiferromagnetic (AFM) state that can enable all of these quantum states, however, highly electron-doped nature of the MnBi$_2$Te$_4$ crystals obstructs the exhibition of the gapped topological surface states. Here, we tailor the material through Sb-substitution to reveal the gapped surface states in MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ (MBST). By shifting the Fermi level into the bulk band gap of MBST, we access the surface states and show a band gap of 50 meV at the Dirac point from quasi-particle interference (QPI) measured by scanning tunneling microscopy/spectroscopy (STM/STS). Surface-dominant conduction is confirmed below the Neel temperature through transport spectroscopy measured by multiprobe STM. The surface band gap is robust against out-of-plane magnetic field despite the promotion of field-induced ferromagnetism. The realization of bulk-insulating MTI with the large exchange gap offers a promising platform for exploring emergent topological phenomena.
The evolution of the thermopower EuCu{2}(Ge{1-x}Si{x}){2} intermetallics, which is induced by the Si-Ge substitution, is explained by the Kondo scattering of conduction electrons on the Eu ions which fluctuate between the magnetic 2+ and non-magnetic 3+ Hunds rule configurations. The Si-Ge substitution is equivalent to chemical pressure which modifies the coupling and the relative occupation of the {it f} and conduction states.
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