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Register a new userThe quantum paraelectric phase of SrTiO$_3$ from first principles
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We demonstrate how the quantum paraelectric ground state of SrTiO$_3$ can be accessed via a microscopic $ab~initio$ approach based on density functional theory. At low temperature the quantum fluctuations are strong enough to stabilize the paraelectric phase even though a classical description would predict a ferroelectric phase. We find that accounting for quantum fluctuations of the lattice and for the strong coupling between the ferroelectric soft mode and lattice elongation is necessary to achieve quantitative agreement with experimental frequency of the ferroelectric soft mode. The temperature dependent properties in SrTiO$_3$ are also well captured by the present microscopic framework.
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Recent experiments have demonstrated that intense terahertz (THz) fields can induce a transition from the quantum paraeletric to the ferroeletric phase of SrTiO$_3$. Here, we investigate this THz field-induced transient ferroeletric phase transition by solving the time-dependent lattice Schodinger equation based on first-principles calculations. We find that transient ferroeletricity originates from a light-induced mixing between ground and first excited lattice states in the quantum paraeletric phase. In agreement with the experimental findings, our study shows that the non-oscillatory second harmonic generation signal can be evidence of transient ferroeletricity in SrTiO$_3$. We reveal the microscopic details of this exotic phase transition and highlight that this phenomenon is a unique behavior of the quantum paraeletric phase.
We report first-principles density-functional pseudopotential calculations on the atomic structures, electronic properties, and band offsets of BaO/BaTiO$_3$ and SrO/SrTiO$_3$ nanosized heterojunctions grown on top of a silicon substrate. The density of states at the junction does not reveal any electronic induced interface states. A dominant perovskite character is found at the interface layer. The tunability of the band offset with the strain conditions imposed by the substrate is studied. Using previously reported theoretical data available for Si/SrO, Si/BaO and BaTiO$_{3}$/SrRuO$_{3}$ interfaces we extrapolate a value for the band alignments along the whole gate stacks of technological interest: Si/SrO/SrTiO$_3$ and Si/BaO/BaTiO$_3$/SrRuO$_3$ heterostructures.
The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultra-thin LaMnO$_3$ films on the mostly used SrTiO$_3$ substrate is a long-existing question under debate. Either strain effect or non-stoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [Science textbf{349}, 716 (2015)], one more mechanism, namely the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultra-thin LaMnO$_3$ films as well as superlattices. Starting from the very precise descriptions of both LaMnO$_3$ and SrTiO$_3$, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO$_3$ layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO$_3$/SrTiO$_3$ heterostructures. Our study not only explains the long-term puzzle regarding the magnetism of ultra-thin LaMnO$_3$ films, but also shed light on how to overcome the notorious magnetic dead layer in ultra-thin manganites.
Low dimensional structures comprised of ferroelectric (FE) PbTiO$_3$ (PTO) and quantum paraelectric SrTiO$_3$ (STO) are hosts to complex polarization textures such as polar waves, flux-closure domains and polar skyrmion phases. Density functional theory (DFT) simulations can provide insight into this order, but, are limited by the computational effort needed to simulate the thousands of required atoms. To relieve this issue, we use the novel multi-site support function (MSSF) method within DFT to reduce the solution time for the electronic groundstate whilst preserving high accuracy. Using MSSFs, we simulate thin PTO films on STO substrates with system sizes $>2000$ atoms. In the ultrathin limit, the polar wave texture with cylindrical chiral bubbles emerges as an intermediate phase between full flux closure domains and in-plane polarization. This is driven by an internal bias field born of the compositionally broken inversion symmetry in the [001] direction. Since the exact nature of this bias field depends sensitively on the film boundary conditions, this informs a new principle of design for manipulating chiral order on the nanoscale through the careful choice of substrate, surface termination or use of overlayers. Antiferrodistortive (AFD) order locally interacts with these polar textures giving rise to strong FE/AFD coupling at the PbO terminated surface driving a $p(2 times Lambda)$ surface reconstruction. This offers another pathway for the local control of ferroelectricity.
The lattice dynamics of the $rm YMnO_3$ magneto-electric compound has been investigated using density functional calculations, both in the ferroelectric and the paraelectric phases. The coherence between the computed and experimental data is very good in the low temperature phase. Using group theory, modes continuity and our calculations we were able to show that the phonons modes observed by Raman scattering at 1200K are only compatible with the ferroelectric $P6_{3} cm$ space group, thus supporting the idea of a ferroelectric to paraelectric phase transition at higher temperature. Finally we proposed a candidate for the phonon part of the observed electro-magnon. This mode, inactive both in Raman scattering and in Infra-Red, was shown to strongly couple to the Mn-Mn magnetic interactions.
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