No Arabic abstract
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states : insulating, normal conduction and resonant conduction.
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupling. In the regime of capacitive coupling we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect.
Motivated by recent developments on the fabrication and control of semiconductor-based quantum dot qubits, we theoretically study a finite system of tunnel-coupled quantum dots with the electrons interacting through the long-range Coulomb interaction. When the inter-electron separation is large and the quantum dot confinement potential is weak, the system behaves as an effective Wigner crystal with a period determined by the electron average density with considerable electron hopping throughout the system. For stronger periodic confinement potentials, however, the system makes a crossover to a Mott-type strongly correlated ground state where the electrons are completely localized at the individual dots with little inter-dot tunneling. In between these two phases, the system is essentially a strongly correlated electron liquid with inter-site electron hopping constrained by strong Coulomb interaction. We characterize this Wigner-Mott-liquid quantum crossover with detailed numerical finite-size diagonalization calculations of the coupled interacting qubit system, showing that these phases can be smoothly connected by tuning the system parameters. Experimental feasibility of observing such a hopping-tuned Wigner-Mott-liquid crossover in currently available semiconductor quantum dot qubits is discussed. In particular, we connect our theoretical results to recent quantum-dot-based quantum emulation experiments where collective Coulomb blockade was demonstrated. One conclusion of our theory is that currently available realistic quantum dot arrays are unable to explore the low-density Wigner phase with only the Mott-liquid crossover being accessible experimentally.
Numerical analysis of the simplest odd-numbered system of coupled quantum dots reveals an interplay between magnetic ordering, charge fluctuations and the tendency of itinerant electrons in the leads to screen magnetic moments. The transition from local-moment to molecular-orbital behavior is visible in the evolution of correlation functions as the inter-dot coupling is increased. Resulting novel Kondo phases are presented in a phase diagram which can be sampled by measuring the zero-bias conductance. We discuss the origin of the even-odd effects by comparing with the double quantum dot.
A dilute concentration of magnetic impurities can dramatically affect the transport properties of an otherwise pure metal. This phenomenon, known as the Kondo effect, originates from the interactions of individual magnetic impurities with the conduction electrons. Nearly a decade ago, the Kondo effect was observed in a new system, in which the magnetic moment stems from a single unpaired spin in a lithographically defined quantum dot, or artificial atom. The discovery of the Kondo effect in artificial atoms spurred a revival in the study of Kondo physics, due in part to the unprecedented control of relevant parameters in these systems. In this review we discuss the physics, origins, and phenomenology of the Kondo effect in the context of recent quantum dot experiments.
We study the heat current through two capacitively coupled quantum dots coupled in series with two conducting leads at different temperatures $T_L$ and $T_R$ in the spinless case (valid for a high applied magnetic field). Our results are also valid for the heat current through a single quantum dot with strongly ferromagnetic leads pointing in opposite directions (so that the electrons with given spin at the dot can jump only to one lead) or through a quantum dot with two degenerate levels with destructive quantum interference and high magnetic field. Although the charge current is always zero, the heat current is finite when the interdot Coulomb repulsion $U$ is taken into account due to many-body effects. We study the thermal conductance as a function of temperature and the dependence of the thermal current with the couplings to the leads, $T_L-T_R$, energy levels of the dots and $U$, including conditions for which an orbital Kondo regime takes place. When the energy levels of the dots are different, the device has rectifying properties for the thermal current. We find that the ratio between the thermal current resulting from a thermal bias $T_L>T_R$ and the one from $T_L<T_R$ is maximized for particular values of the energy levels, one above and the other below the Fermi level.