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Register a new userStructural phase transition of two-dimensional monolayer SnTe from artificial neural network
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As machine learning becomes increasingly important in engineering and science, it is inevitable that machine learning techniques will be applied to the investigation of materials, and in particular the structural phase transitions common in ferroelectric materials. Here, we build and train an artificial neural network to accurately predict the energy change associated with atom displacements and use the trained artificial neural network in Monte-Carlo simulations on ferroelectric materials to investigate their phase transitions. We apply this approach to two-dimensional monolayer SnTe and show that it can indeed be used to simulate the phase transitions and predict the transition temperature. The artificial neural network, when viewed as a universal mathematical structure, can be readily transferred to the investigation of other ferroelectric materials when training data generated with ab initio methods are available.
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The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity is reported in monolayer SnTe system by transition metal (TM) doping. Based on first-principles calculations, the spontaneous spin polarization could be realized by TM doping in ferroelectric SnTe monolayer. In addition to in-plane ferroelectric polarization, the out-of-plane ferroelectric polarization emerges in Mn (Fe)-doped SnTe monolayer due to the internal displacement of TM from the surface. Interestingly, the crystalline field centered on TM and interaction between the dopant and Te gradually enhanced with the increment of atomic number of doping elements, which explains why the formation energy decreases. The realization of multiferroics in SnTe monolayer could provide theoretical guidance for experimental preparation of low-dimensional multiferroic materials.
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Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically forbidden region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.
A new multifunctional 2D material is theoretically predicted based on systematic ab-initio calculations and model simulations for the honeycomb lattice of endohedral fullerene W@C28 molecules. It has structural bistability, ferroelectricity, multiple magnetic phases, and excellent valley characters and can be easily functionalized by the proximity effect with magnetic isolators such as MnTiO3. Furthermore, we may also manipulate the valley Hall and spin transport properties by selectively switch a few W@C28 molecules to the metastable phase. These findings pave a new way in integrate different functions in a single 2D material for technological innovations.
Structural phase transitions between semiconductors and topological insulators have rich applications in nanoelectronics but are rarely found in two-dimensional (2D) materials. In this work, by combining ab initio computations and evolutionary structure search, we investigate two stable 2D forms of gold(I) telluride (Au$_{2}$Te) with square symmetry, noted as s(I)- and s(II)-Au$_{2}$Te. s(II)-Au$_{2}$Te is the global minimum structure and is a room-temperature topological insulator. s(I)-Au$_{2}$Te is a direct-gap semiconductor with high carrier mobilities and unusual in-plane negative Poissons ratio. Both s(I) and s(II) phases have ultra-low Youngs modulus, implying high flexibility. By applying a small tensile strain, s(II)-Au$_{2}$Te can be transformed into s(I)-Au$_{2}$Te. Hence, a structural phase transition from a room-temperature topological insulator to an auxetic semiconductor is found in the 2D forms of Au$_{2}$Te, which enables potential applications in phase-change electronic devices. Moreover, we elucidate the mechanism of the phase transition with the help of phonon spectra and group theory analysis.
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