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Register a new userTunable ferromagnetism at non-integer filling of a moire superlattice
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The flat bands resulting from moire superlattices in magic-angle twisted bilayer graphene (MATBG) and ABC-trilayer graphene aligned with hexagonal boron nitride (ABC-TLG/hBN) have been shown to give rise to fascinating correlated electron phenomena such as correlated insulators and superconductivity. More recently, orbital magnetism associated with correlated Chern insulators was found in this class of layered structures centered at integer multiples of n0, the density corresponding to one electron per moire superlattice unit cell. Here we report the experimental observation of ferromagnetism at fractional filling of a flat Chern band in an ABC-TLG/hBN moiresuperlattice. The ferromagnetic state exhibits prominent ferromagnetic hysteresis behavior with large anomalous Hall resistivity in a broad region of densities, centered in the valence miniband at n = -2.3 n0. This ferromagnetism depends very sensitively on the control parameters in the moire system: not only the magnitude of the anomalous Hall signal, but also the sign of the hysteretic ferromagnetic response can be modulated by tuning the carrier density and displacement field. Our discovery of electrically tunable ferromagnetism in a moire Chern band at non-integer filling highlights the opportunities for exploring new correlated ferromagnetic states in moire heterostructures.
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Studies on two-dimensional electron systems in a strong magnetic field first revealed the quantum Hall (QH) effect, a topological state of matter featuring a finite Chern number (C) and chiral edge states. Haldane later theorized that Chern insulators with integer QH effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (TLG/hBN) moire superlattice provides an attractive platform to explore Chern insulators because it features nearly flat moire minibands with a valley-dependent electrically tunable Chern number. Here we report the experimental observation of a correlated Chern insulator in a TLG/hBN moire superlattice. We show that reversing the direction of the applied vertical electric field switches TLG/hBNs moire minibands between zero and finite Chern numbers, as revealed by dramatic changes in magneto-transport behavior. For topological hole minibands tuned to have a finite Chern number, we focus on 1/4 filling, corresponding to one hole per moire unit cell. The Hall resistance is well quantized at h/2e2, i.e. C = 2, for |B| > 0.4 T. The correlated Chern insulator is ferromagnetic, exhibiting significant magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Our discovery of a C = 2 Chern insulator at zero magnetic field should open up exciting opportunities for discovering novel correlated topological states, possibly with novel topological excitations, in nearly flat and topologically nontrivial moire minibands.
Strong electron correlation and spin-orbit coupling (SOC) provide two non-trivial threads to condensed matter physics. When these two strands of physics come together, a plethora of quantum phenomena with novel topological order have been predicted to emerge in the correlated SOC regime. In this work, we examine the combined influence of electron correlation and SOC on a 2-dimensional (2D) electronic system at the atomic interface between magic-angle twisted bilayer graphene (tBLG) and a tungsten diselenide (WSe) crystal. In such a structure, strong electron correlation within the moire flatband stabilizes correlated insulating states at both quarter and half-filling, whereas SOC transforms these Mott-like insulators into ferromagnets, evidenced by robust anomalous Hall effect with hysteretic switching behavior. The coupling between spin and valley degrees of freedom is unambiguously demonstrated as the magnetic order is shown to be tunable with an in-plane magnetic field, or a perpendicular electric field. In addition, we examine the influence of SOC on the isospin order and stability of superconductivity. Our findings establish an efficient experimental knob to engineer topological properties of moire bands in twisted bilayer graphene and related systems.
The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transition metal dichalcogenide (TMDC) moire superlattices. Direct observation of the 2D Wigner crystal lattice in real space, however, has remained an outstanding challenge. Scanning tunneling microscopy (STM) in principle has sufficient spatial resolution to image a Wigner crystal, but conventional STM measurements can potentially alter fragile Wigner crystal states in the process of measurement. Here we demonstrate real-space imaging of 2D Wigner crystals in WSe2/WS2 moire heterostructures using a novel non-invasive STM spectroscopy technique. We employ a graphene sensing layer in close proximity to the WSe2/WS2 moire superlattice for Wigner crystal imaging, where local STM tunneling current into the graphene sensing layer is modulated by the underlying electron lattice of the Wigner crystal in the WSe2/WS2 heterostructure. Our measurement directly visualizes different lattice configurations associated with Wigner crystal states at fractional electron fillings of n = 1/3, 1/2, and 2/3, where n is the electron number per site. The n=1/3 and n=2/3 Wigner crystals are observed to exhibit a triangle and a honeycomb lattice, respectively, in order to minimize nearest-neighbor occupations. The n = 1/2 state, on the other hand, spontaneously breaks the original C3 symmetry and forms a stripe structure in real space. Our study lays a solid foundation toward the fundamental understanding of rich Wigner crystal states in WSe2/WS2 moire heterostructures.
At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and Hofstadter bands; in both cases, a large magnetic field is required to engineer the underlying flat band. The recent observation of quantum anomalous Hall effects (QAH) in narrow band moire systems has led to the theoretical prediction that such phases may be realized even at zero magnetic field. Here we report the experimental observation of insulators with Chern number $C=1$ in the zero magnetic field limit at $ u=3/2$ and $7/2$ filling of the moire superlattice unit cell in twisted monolayer-bilayer graphene (tMBG). Our observation of Chern insulators at half-integer values of $ u$ suggests spontaneous doubling of the superlattice unit cell, in addition to spin- and valley-ferromagnetism. This is confirmed by Hartree-Fock calculations, which find a topological charge density wave ground state at half filling of the underlying $C=2$ band, in which the Berry curvature is evenly partitioned between occupied and unoccupied states. We find the translation symmetry breaking order parameter is evenly distributed across the entire folded superlattice Brillouin zone, suggesting that the system is in the flat band, strongly correlated limit. Our findings show that the interplay of quantum geometry and Coulomb interactions in moire bands allows for topological phases at fractional superlattice filling that spontaneously break time-reversal symmetry, a prerequisite in pursuit of zero magnetic field phases harboring fractional statistics as elementary excitations or bound to lattice dislocations.
Complex oxide interfaces are a promising platform for studying a wide array of correlated electron phenomena in low-dimensions, including magnetism and superconductivity. The microscopic origin of these phenomena in complex oxide interfaces remains an open question. Here we investigate for the first time the magnetic properties of semi-insulating NdTiO$_3$/SrTiO$_3$ (NTO/STO) interfaces and present the first milli-Kelvin study of NTO/STO. The magnetoresistance (MR) reveals signatures of local ferromagnetic order and of spin-dependent thermally-activated transport, which are described quantitatively by a simple phenomenological model. We discuss possible origins of the interfacial ferromagnetism. In addition, the MR also shows transient hysteretic features on a timescale of ~10-100 seconds. We demonstrate that these are consistent with an extrinsic magneto-thermal origin, which may have been misinterpreted in previous reports of magnetism in STO-based oxide interfaces. The existence of these two MR regimes (steady-state and transient) highlights the importance of time-dependent measurements for distinguishing signatures of ferromagnetism from other effects that can produce hysteresis at low temperatures.
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