A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
published by Deep Jariwala
in 2020
in Physics
and research's language is
English
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Abstract in English
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.