No Arabic abstract
This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than 20 dB across the band. The measured OFF-state isolation ranges from 27 dB at 1 GHz to 17 dB at 4 GHz. The switch comprises a single silicon chiplet excited by a 915-nm laser fiber which creates electron-hole pairs, thereby exciting the ON-state silicon plasma. An optical fiber is guided through the bottom of the RF substrate to illuminate the chiplet, which bridges a 1.075-mm microstrip line gap. To the best of our knowledge, this is the lowest-loss silicon plasma switch demonstrated today.
The temperature of a nonneutral plasma confined in a Penning-Malmberg trap can be determined by slowly lowering one side of the traps electrostatic axial confinement barrier; the temperature is inferred from the rate at which particles escape the trap as a function of the barrier height. Often, the escaping particles are directed toward a microchannel plate (MCP), and the resulting amplified charge is collected on a phosphor screen. The screen is used for imaging the plasma, but can also be used as a Faraday cup FC for a temperature measurement. The sensitivity limit is then set by microphonic noise enhanced by the screens high voltage bias. Alternately, a silicon photomultiplier (SiPM) can be employed to measure the charge via the light emitted from the phosphor screen. This decouples the signal from the microphonic noise and allows the temperature of colder and smaller plasmas to be measured than could be measured previously; this paper focusses on the advantages of a SiPM over a FC.
We present theoretical results of a low-loss all-optical switch based on electromagnetically induced transparency and the classical Zeno effect in a microdisk resonator. We show that a control beam can modify the atomic absorption of the evanescent field which suppresses the cavity field buildup and alters the path of a weak signal beam. We predict more than 35 dB of switching contrast with less than 0.1 dB loss using just 2 micro-Watts of control-beam power for signal beams with less than single photon intensities inside the cavity.
Superconducting Radio Frequency (SRF) cavities performance preservation is crucial, from vertical test to accelerator operation. Field Emission (FE) is still one of the performance limiting factors to overcome and plasma cleaning has been proven successful by the Spallation Neutron Source (SNS), in cleaning field emitters and increasing the work function of Nb. A collaboration has been established between Fermi National Accelerator Laboratory (FNAL), SLAC National Accelerator Laboratory and Oak Ridge National Laboratory (ORNL) with the purpose of applying plasma processing to the Linac Coherent Light Source-II (LCLS-II) cavities, in order to minimize and overcome field emission without affecting the high Q of nitrogen-doped cavities. The cleaning for LCLS-II will follow the same plasma composition adopted at SNS, which allows in-situ processing of cavities installed in cryomodules from hydrocarbon contaminants. A novel method for plasma ignition has been developed at FNAL: a plasma glow discharge is ignited using high order modes to overcome limitations imposed by the fundamental power coupler, allowing in-situ cleaning for cavities in cryomodule. The plasma can be easily ignited and tuned in each of the cavity cells using low RF power. A method for plasma detection has been developed as well, which allows the detection of the plasma location in the cavity without the need of cameras at both cavity ends. The presented method can be applied to other multi-cell cavity designs, even for accelerators where the coupling for the fundamental modes at room temperature is very weak.
There has been much interest in the blowout regime of plasma wakefield acceleration (PWFA), which features ultra-high fields and nonlinear plasma motion. Using an exact analysis, we examine here a fundamental limit of nonlinear PWFA excitation, by an infinitesimally short, relativistic electron beam. The beam energy loss in this case is shown to be linear in charge even for nonlinear plasma response, where a normalized, unitless charge exceeds unity. The physical basis for this effect is discussed, as are deviations from linear behavior observed in simulations with finite length beams.
Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is generally a two-terminal electronic element with conductance that varies nonlinearly with external electric stimuli and can be remembered when the electric power is turned off. As an alternative, light can be used to tune the memconductance and endow a memristor with a combination of the advantages of both photonics and electronics. Both increases and decreases in optically induced memconductance have been realized in different memristors; however, the reversible tuning of memconductance with light in the same device remains a considerable challenge that severely restricts the development of optoelectronic memristors. Here we describe an all-optically controlled (AOC) analog memristor with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. Our memristor is based on the relatively mature semiconductor material InGaZnO (IGZO) and a memconductance tuning mechanism of light-induced electron trapping and detrapping. We demonstrate that spike-timing-dependent plasticity (STDP) learning can be realized in our device, indicating its potential applications in AOC spiking neural networks (SNNs) for highly efficient optoelectronic neuromorphic computing.