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Register a new userDispersive sensing of charge states in a bilayer graphene quantum dot
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We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280 MHz is directly coupled to an ohmic contact of the quantum dot device. The detection scheme based on changes in the quantum capacitance operates over a wide gate-voltage range and allows to probe excited states down to the single-electron regime. Crucially, the presented sensing technique avoids the use of an additional, capacitively coupled quantum device such as a quantum point contact or single electron transistor, making dispersive sensing particularly interesting for gate-defined graphene quantum dots.
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We consider a square lattice configuration of circular gate-defined quantum dots in an unbiased graphene sheet and calculate the electronic, particularly spectral properties of finite albeit actual sample sized systems by means of a numerically exact kernel polynomial expansion technique. Analyzing the local density of states and the momentum resolved photoemission spectrum we find clear evidence for a series of quasi-bound states at the dots, which can be probed by optical measurements. We further analyze the interplay of the superlattice structure with dot localized modes on the electron energy dispersion. Effects of disordered dot lattices are discussed too.
We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the onset of inelastic cotunneling in the diamond region could be detected. For low magnetic fields, the positions of the single-particle energy levels fluctuate on the scale of a flux quantum penetrating the dot area. For higher magnetic fields, the transition to the formation of Landau levels is observed. Estimates based on the linear energy-momentum relation of graphene give carrier numbers of the order of 10 for our device.
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground-state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hunds rule for a valley-degenerate system, which is fundamentally different to quantum dots in carbon nano tubes and GaAs-based quantum dots. The spin-singlet excited states are found to be valley-triplet states by tilting the magnetic field with respect to the sample plane. We quantify the exchange energy to be 0.35meV and measure a valley and spin g-factor of 36 and 2, respectively.
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level.
We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.
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