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Register a new userOptical diffraction from Ge$_2$Sb$_2$Te$_5$ fishnet metasurfaces
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D. V. Bochek
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We report the creation of Ge$_2$Sb$_2$Te$_5$ metasurfaces on sapphire substrates by the ablation method and the study of their structural properties by scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical diffraction. The main emphasis is on the optical technique, which boils down to obtaining bright Laue diffraction patterns on a screen, observing them with the naked eye, and analyzing the fine structure of diffraction reflections. It has been demonstrated that in one simple optical experiment it is possible to assess the quality of fabricated metasurfaces, determine the structure symmetry, and, moreover, determine the number of structural elements and lattice constants of the micron-sized metasurface. The accuracy of the optical technique is confirmed by comparison with the results of studies by SEM and AFM methods.
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We examine the ultrafast optical response of the crystalline and amorphous phases of the phase change material Ge$_2$Sb$_2$Te$_5$ below the phase transformation threshold. Simultaneous measurement of the transmissivity and reflectivity of thin film samples yields the time-dependent evolution of the dielectric function for both phases. We then identify how lattice motion and electronic excitation manifest in the dielectric response. The dielectric response of both phases is large but markedly different. At 800 nm, the changes in amorphous GST are well described by the Drude response of the generated photo-carriers, whereas the crystalline phase is better described by the depopulation of resonant bonds. We find that the generated coherent phonons have a greater influence in the amorphous phase than the crystalline phase. Furthermore, coherent phonons do not influence resonant bonding. For fluences up to 50% of the transformation threshold, the structure does not exhibit bond softening in either phase, enabling large changes of the optical properties without structural modification.
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most importantly, our results show that doping produces the desired electrical performance without adversely affecting the films optical properties. The nickel doping level is approximately 2% and the lattice structure remains nearly unchanged when compared with undoped-GST. The refractive indices at amorphous and crystalline states were obtained using ellipsometry which echoes the results from XRD. The materials thermal transport properties are measured using time-domain thermoreflectance (TDTR), showing no change upon doping. The advantages of this doping system will open up new opportunities for designing electrically reconfigurable high speed optical elements in the near-infrared spectrum.
We have investigated the growth of Pt on Ge(110) using scanning tunneling microscopy and spectroscopy. The deposition of several monolayers of Pt on Ge(110) followed by annealing at 1100 K results in the formation of three-dimensional metallic Pt-Ge nanocrystals. The outermost layer of these crystals exhibits a honeycomb structure. The honeycomb structure is composed of two hexagonal sub-lattices that are displaced vertically by 0.2 {AA} with respect to each other. The nearest-neighbor distance of the atoms in the honeycomb lattice is 2.5${pm}$0.1 {AA}, i.e. very close to the predicted nearest-neighbor distance in germanene (2.4 {AA}). Scanning tunneling spectroscopy reveals that the atomic layer underneath the honeycomb layer is more metallic than the honeycomb layer itself. These observations are in line with a model recently proposed for metal di-(silicides/)germanides: a hexagonal crystal with metal layers separated by semiconductor layers with a honeycomb lattice. Based on our observations we propose that the outermost layer of the Ge2Pt nanocrystal is a germanene layer.
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of MnBi$_2$Te$_4$ and Sb$_2$Te$_3$ layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-temperature QAHE. We find that interlayer ferromagnetic transition can happen at $T_{rm C}=42~rm K$ when a five-quintuple-layer Sb$_2$Te$_3$ topological insulator is inserted into two septuple-layer MnBi$_2$Te$_4$ with interlayer antiferromagnetic coupling. Band structure and topological property calculations show that MnBi$_2$Te$_4$/Sb$_2$Te$_3$/MnBi$_2$Te$_4$ heterostructure exhibits a topologically nontrivial band gap around 26 meV, that hosts a QAHE with a Chern number of $mathcal{C}=1$. In addition, our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to the fact of natural charge-compensation, originating from the intrinsic n-type defects in MnBi$_2$Te$_4$ and p-type defects in Sb$_2$Te$_3$.
Amorphous oxide thin films play a fundamental role in state-of-the art interferometry experiments, such as gravitational wave detectors where these films compose the high reflectance mirrors of end and input masses. The sensitivity of these detectors is affected by thermal noise in the mirrors with its main source being the mechanical loss of the high index layers. These thermally driven fluctuations are a fundamental limit to optical interferometry experiments and there is a pressing need to understand the underlying processes that lead to mechanical dissipation in materials at room temperature. Two strategies are known to lower the mechanical loss: employing a mixture of Ta$_2$O$_5$ with $approx$ 20% of TiO$_2$ and post-deposition annealing, but the reasons behind this are not completely understood. In this work, we present a systematic study of the structural and optical properties of ion beam sputtered TiO$_2$-doped Ta$_2$O$_5$ films as a function of the annealing temperature. We show for the first time that low mechanical loss is associated with a material morphology that consists of nanometer sized Ar-rich bubbles embedded into an atomically homogeneous mixed titanium-tantalum oxide. When the Ti cation ratio is high, however, phase separation occurs in the film which leads to increased mechanical loss. These results indicate that for designing low mechanical loss mixed oxide coatings for interferometry applications it would be beneficial to identify materials with the ability to form ternary compounds while the dopant ratio needs to be kept low to avoid phase separation.
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