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Register a new userFloquet-engineering topological transitions in a twisted transition metal dichalcogenide homobilayer
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Motivated by the recent experimental realization of twisted transition metal dichalcogenide bilayers, we study a simplified model driven by different forms of monochromatic light. As a concrete and representative example we use parameters that correspond to a twisted MoTe$_2$ homobilayer. First, we consider irradiation with circularly polarized light in free space and demonstrate that the corresponding Floquet Hamiltonian takes the same form as the static Hamiltonian, only with a constant overall shift in quasi-energy. This is in stark contrast to twisted bilayer graphene, where new terms are typically generated under an analagous drive. Longitudinal light, on the other hand, which can be generated from the transverse magnetic mode in a waveguide, has a much more dramatic effect--it renormalizes the tunneling strength between the layers, which effectively permits the tuning of the twist angle {em in-situ}. We find that, by varying the frequency and amplitude of the drive, one can induce a topological transition that cannot be obtained with the traditional form of the Floquet drive in free space. Furthermore, we find that strong drives can have a profound effect on the layer pseudospin texture of the twisted system, which coincides with multiple simultaneous band gap closings in the infinite-frequency limit. Surprisingly, these bandgap closings are not associated with topological transitions. For high but finite drive frequencies near $0.7$eV, the infinite-frequency band crossings become band gap minima of the order of $10^{-6}$ eV or smaller.
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The long wavelength moire superlattices in twisted 2D structures have emerged as a highly tunable platform for strongly correlated electron physics. We study the moire bands in twisted transition metal dichalcogenide homobilayers, focusing on WSe$_2$, at small twist angles using a combination of first principles density functional theory, continuum modeling, and Hartree-Fock approximation. We reveal the rich physics at small twist angles $theta<4^circ$, and identify a particular magic angle at which the top valence moire band achieves almost perfect flatness. In the vicinity of this magic angle, we predict the realization of a generalized Kane-Mele model with a topological flat band, interaction-driven Haldane insulator, and Mott insulators at the filling of one hole per moire unit cell. The combination of flat dispersion and uniformity of Berry curvature near the magic angle holds promise for realizing fractional quantum anomalous Hall effect at fractional filling. We also identify twist angles favorable for quantum spin Hall insulators and interaction-induced quantum anomalous Hall insulators at other integer fillings.
Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T phase of transition metal dichalcogenides (MX2, M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX2 undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX2 undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall (QAH) effect and into trivial phases with increasing light intensity. From a general perspective, our work brings further insight into non-equilibrium topological systems.
Fabricating van der Waals (vdW) bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional (2D) layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as a remarkable parameter that can control the period of lateral confinement, and nature of the exciton (Coulomb bound electron-hole pair) in reciprocal space thus creating exotic physical states including moire excitons. In this review article, we focus on opto-electronic properties of excitons in transition metal dichalcogenide (TMD) semiconductor twisted BL-HS. We look at existing evidence of moire excitons in localized and strongly correlated states, and at nanoscale mapping of moire superlattice and lattice-reconstruction. This review will be helpful in guiding the community as well as motivating work in areas such as near-field optical measurements and controlling the creation of novel physical states.
In twisted bilayers of semiconducting transition metal dichalcogenides (TMDs), a combination of structural rippling and electronic coupling gives rise to periodic moire potentials that can confine charged and neutral excitations. Here, we report experimental measurements of the structure and spectroscopic properties of twisted bilayers of WSe2 and MoSe2 in the H-stacking configuration using scanning tunneling microscopy (STM). Our experiments reveal that the moire potential in these bilayers at small angles is unexpectedly large, reaching values of above 300 meV for the valence band and 150 meV for the conduction band - an order of magnitude larger than theoretical estimates based on interlayer coupling alone. We further demonstrate that the moire potential is a non-monotonic function of moire wavelength, reaching a maximum at around a 13nm moire period. This non-monotonicity coincides with a drastic change in the structure of the moire pattern from a continuous variation of stacking order at small moire wavelengths to a one-dimensional soliton dominated structure at large moire wavelengths. We show that the in-plane structure of the moire pattern is captured well by a continuous mechanical relaxation model, and find that the moire structure and internal strain rather than the interlayer coupling is the dominant factor in determining the moire potential. Our results demonstrate the potential of using precision moire structures to create deeply trapped carriers or excitations for quantum electronics and optoelectronics.
Motivated by the recent experimental realization of twisted trilayer graphene and the observed superconductivity that is associated with its flat bands at specific angles, we study trilayer graphene under the influence of different forms of light in the non-interacting limit. Specifically, we study four different types of stacking configurations with a single twisted layer. In all four cases, we study the impact of circularly polarized light and longitudinal light coming from a waveguide. We derive effective time-independent Floquet Hamiltonians and review light-induced changes to the band structure. For circularly polarized light, we find band flattening effects as well as band gap openings. We emphasize that there is as rich band topology, which we summarize in Chern number maps that are different for all four studied lattice configurations. The case of a so-called ABC stacked top layer twist is especially rich and shows a different phase diagram depending on the handedness of the circularly polarized light. Consequently, we propose an experiment where this difference in typologies could be captured via optical conductivity measurements. In contrast for the case of longitudinal light that is coming from a waveguide, we find that the band structure is very closely related to the equilibrium one but the magic angles can be tuned in-situ by varying the intensity of the incident beam of light.
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