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Register a new userCharge noise suppression in capacitively coupled singlet-triplet spin qubits under magnetic field
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Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been demonstrated in several types of spin qubits, the existence of one for coupled singlet-triplet qubits is unclear. We theoretically demonstrate, using full configuration-interaction calculations, that a range of nearly sweet spots appear in the coupled singlet-triplet qubit system when a strong enough magnetic field is applied externally. We further demonstrate that ramping to and from the judiciously chosen nearly sweet spot using sequences based on the shortcut to adiabaticity offers maximal gate fidelities under charge noise and phonon-induced decoherence. These results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
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Recent work on Ising-coupled double-quantum-dot spin qubits in GaAs with voltage-controlled exchange interaction has shown improved two-qubit gate fidelities from the application of oscillating exchange along with a strong magnetic field gradient between adjacent dots. By examining how noise propagates in the time-evolution operator of the system, we find an optimal set of parameters that provide passive stroboscopic circumvention of errors in two-qubit gates to first order. We predict over 99% two-qubit gate fidelities in the presence of quasistatic and 1/$textit{f}$ noise, which is an order of magnitude improvement over the typical unoptimized implementation.
Singlet-triplet qubits in lateral quantum dots in semiconductor heterostructures exhibit high-fidelity single-qubit gates via exchange interactions and magnetic field gradients. High-fidelity two-qubit entangling gates are challenging to generate since weak interqubit interactions result in slow gates that accumulate error in the presence of noise. However, the interqubit electrostatic interaction also produces a shift in the local double well detunings, effectively changing the dependence of exchange on the gate voltages. We consider an operating point where the effective exchange is first order insensitive to charge fluctuations while maintaining nonzero interactions. This sweet spot exists only in the presence of interactions. We show that working at the interacting sweet spot can directly produce maximally entangling gates and we simulate the gate evolution under realistic 1/f noise. We report theoretical two-qubit gate fidelities above 99% in GaAs and Si systems.
We investigate a method for entangling two singlet-triplet qubits in adjacent double quantum dots via capacitive interactions. In contrast to prior work, here we focus on a regime with strong interactions between the qubits. The interplay of the interaction energy and simultaneous large detunings for both double dots gives rise to the double charge resonant regime, in which the unpolarized (1111) and fully polarized (0202) four-electron states in the absence of interqubit tunneling are near degeneracy, while being energetically well-separated from the partially polarized (0211 and 1102) states. A rapid controlled-phase gate may be realized by combining time evolution in this regime in the presence of intraqubit tunneling and the interqubit Coulomb interaction with refocusing ${pi}$ pulses that swap the singly occupied singlet and triplet states of the two qubits via, e.g., magnetic gradients. We calculate the fidelity of this entangling gate, incorporating models for two types of noise -- charge fluctuations in the single-qubit detunings and charge relaxation within the low-energy subspace via electron-phonon interaction -- and identify parameter regimes that optimize the fidelity. The rates of phonon-induced decay for pairs of GaAs or Si double quantum dots vary with the sizes of the dipolar and quadrupolar contributions and are several orders of magnitude smaller for Si, leading to high theoretical gate fidelities for coupled singlet-triplet qubits in Si dots. We also consider the dependence of the capacitive coupling on the relative orientation of the double dots and find that a linear geometry provides the fastest potential gate.
In addition to magnetic field and electric charge noise adversely affecting spin qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge---crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically-corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrecte
We consider a system of two purely capacitively-coupled singlet-triplet qubits, and numerically simulate the energy structure of four electrons in two double quantum dots with a large potential barrier between them. We calculate the interqubit coupling strength using an extended Hund-Mulliken approach which includes excited orbitals in addition to the lowest energy orbital for each quantum dot. We show the coupling strength as a function of the qubit separation, as well as plotting it against the detunings of the two double quantum dots, and show that the general qualitative features of our results can be captured by a potential-independent toy model of the system.
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