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Register a new userExchange-striction driven ultrafast nonthermal lattice dynamics in NiO
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Added by
Yoav William Windsor
Publication date
2020
fields
Physics
and research's language is
English
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We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AF) semiconductor NiO. Using the scattering vector (Q) dependence of Bragg diffraction, we introduce a Q-resolved effective lattice temperature, and identify a nonthermal lattice state with preferential displacement of O compared to Ni ions, which occurs within ~0.3 ps and persists for 25 ps. We associate this with transient changes to the AF exchange striction-induced lattice distortion, supported by the observation of a transient Q-asymmetry of Friedel pairs. Our observation highlights the role of spin-lattice coupling in routes towards ultrafast control of spin order.
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We report $alpha$-Cu$_2$V$_2$O$_7$ to be an improper multiferroic with the simultaneous development of electric polarization and magnetization below $T_C$ = 35 K. The observed spontaneous polarization of magnitude 0.55 $mu$Ccm$^{-2}$ is highest among the copper based improper multiferroic materials. Our study demonstrates sizable amount of magneto-electric coupling below $T_C$ even with a low magnetic field. The theoretical calculations based on density functional theory (DFT) indicate magnetism in $alpha$-Cu$_2$V$_2$O$_7$ is a consequence of {em ferro-orbital} ordering driven by polar lattice distortion due to the unique pyramidal (CuO$_{5}$) environment of Cu. The spin orbit coupling (SOC) further stabilize orbital ordering and is crucial for magnetism. The calculations indicate that the origin of the giant ferroelectric polarization is primarily due to the symmetric exchange-striction mechanism and is corroborated by temperature dependent X-ray studies.
NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of the NiO phonon frequency. On the other hand, a tensile strain was detected in the NiO film grown on MgO (001) substrate which induces a softening of the phonon frequency. Overall, the variation of in-plane strain from -0.36% to +0.48% yields the decrease of the phonon frequency from 409.6 cm-1 to 377.5 cm-1 which occurs due to the ~1% change of the inter-atomic distances. The magnetic exchange -driven phonon splitting Delta(W) in three different sample, with relaxed (i.e. zero) strain, 0.36% compressive and 0.48% tensile strain was measured as a function of temperature. The Delta(W) increases on cooling in NiO relaxed film as in the previously published work on a bulk crystal. The splitting increases on cooling also in 0.48% tensile strained film, but Delta(W) is systematically 3-4 cm-1 smaller than in relaxed film. Since the phonon splitting is proportional to the non-dominant magnetic exchange interaction J1, the reduction of phonon splitting in tensile-strained film was explained by a diminishing J1 with lattice expansion. Increase of Delta(W) on cooling can be also explained by rising of J1 with reduced temperature.
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