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Competition between fractional quantum Hall liquid and Wigner solid at small fillings: Role of layer thickness and Landau level mixing

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 Publication date 2020
  fields Physics
and research's language is English




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What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($ u$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $ u=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $simeq 1/3$ and $simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states.



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We study a bilayer system hosting exotic many-body states of two-dimensional electron systems (2DESs) in close proximity but isolated from one another by a thin barrier. One 2DES has low electron density and forms a Wigner solid (WS) at high magnetic fields. The other has much higher density and, in the same field exhibits fractional quantum Hall states (FQHSs). The WS manifests microwave resonances which are understood as pinning modes, collective oscillations of the WS within the small but finite ubiquitous disorder. Our measurements reveal a striking evolution of the pinning mode frequencies of the WS layer with the formation of the FQHSs in the nearby layer, evincing a strong coupling between the WS pinning modes and the state of the 2DES in the adjacent layer, mediated by screening.
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