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Register a new userDrawing WS2 thermal sensors on paper substrates
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Added by
Andres Castellanos-Gomez
Publication date
2020
fields
Physics
and research's language is
English
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Paper based thermoresistive sensors are fabricated by rubbing WS2 powder against a piece of standard copier paper, like the way a pencil is used to write on paper. The abrasion between the layered material and the rough paper surface erodes the material, breaking the weak van der Waals interlayer bonds, yielding a film of interconnected platelets. The resistance of WS2 presents a strong temperature dependence, as expected for a semiconductor material in which charge transport is due to thermally activated carriers. This strong temperature dependence makes the paper supported WS2 devices extremely sensitive to small changes in temperature. This exquisite thermal sensitivity, and their fast response times to sudden temperature changes, is exploited thereby demonstrating the usability of a WS2-on-paper thermal sensor in a respiration monitoring device.
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Highly flexible electromagnetic interference (EMI) shielding material with excellent shielding performance is of great significance to practical applications in next-generation flexible devices. However, most EMI materials suffer from insufficient flexibility and complicated preparation methods. In this study, we propose a new scheme to fabricate a magnetic Ni particle/Ag matrix composite ultrathin film on a paper surface. For a ~2 micro meter thick film on paper, the EMI shielding effectiveness (SE) was found to be 46.2 dB at 8.1 GHz after bending 200,000 times over a radius of ~2 mm. The sheet resistance (Rsq) remained lower than 2.30 Ohm after bending 200,000 times. Contrary to the change in Rsq, the EMI SE of the film generally increased as the weight ratio of Ag to Ni increased, in accordance with the principle that EMI SE is positively related with an increase in electrical conductivity. Desirable EMI shielding ability, ultrahigh flexibility, and simple processing provide this material with excellent application prospects.
The hot disk transient plane source (TPS) method is a widely used standard technique (ISO 22007-2) for the characterization of thermal properties of materials, especially the thermal conductivity, k. Despite its well-established reliability for a wide variety of common materials, the hot disk TPS method is also known to suffer from a substantial systematic errors when applied to low-k thermal insulation materials. Here, we present a combined numerical and experimental study on the influence of the geometry of hot disk sensor on measured value of low-k materials. We demonstrate that the error is strongly affected by the finite thickness and thermal mass of the sensors insulation layer was well as the corresponding increase of the effective heater size beyond the radius of the embedded metal heater itself. We also numerically investigate the dependence of the error on the sample thermal properties, confirming that the errors are worse in low-k samples. A simple correction function is also provided, which converts the apparent (erroneous) result from a standard hot disk TPS measurement to a more accurate value. A standard polyimide sensor was also optimized using both wet and dry etching to provide more accurate measurement directly. Experimentally corrected value of k for Airloy x56 aerogel and a commercial silica aerogel using the numerical correction factor derived based on the standard TPS sensor is in excellent agreement with the directly measured value from the TPS sensor using the optimized polyimide sensor. Both of these methods can reduce the errors to less than 4% as compared to around 40% error of overestimation from raw values measured with the pristine sensor. Such results show that both the numerical correction to a pristine senor or an optimized sensor are capable of providing highly accurate value of thermal conductivity for such materials.
We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. 3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to 290 nT/sqrt(Hz) and sensitivity up to 0.55 V/VT was found for Hall sensors fabricated on flexible foil. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.
Paper has the potential to dramatically reduce the cost of electronic components. In fact, paper is 10 000 times cheaper than crystalline silicon, motivating the research to integrate electronic materials on paper substrates. Among the different electronic materials, van der Waals materials are attracting the interest of the scientific community working on paper-based electronics because of the combination of high electrical performance and mechanical flexibility. Up to now, different methods have been developed to pattern conducting, semiconducting and insulating van der Waals materials on paper but the integration of superconductors remains elusive. Here, the deposition of NbSe2, an illustrative van der Waals superconductor, on standard copy paper is demonstrated. The deposited NbSe2 films on paper display superconducting properties (e.g. observation of Meissner effect and resistance drop to zero-resistance state when cooled down below its critical temperature) similar to those of bulk NbSe2.
We demonstrate that photoemission properties of GaAs photocathodes (PCs) can be altered by surface acoustic waves (SAWs) generated on the PC surface due to dynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate that electron effective lifetime in p-doped GaAs may increase by a factor of 10x to 20x. It implies a significant, by a factor of 2x to 3x, increase of quantum efficiency (QE) for GaAs PCs. Essential steps in device fabrication are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of I-V characteristic of the SAW device, and ability to survive high-temperature annealing.
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