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Register a new userWind Driven Semiconductor Electricity Generator With High Direct Current Output Based On a Dynamic Schottky Junction
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As the fast development of internet of things (IoTs), distributed sensors have been frequently used and the small and portable power sources are highly demanded. However, the present portable power source such as lithium battery has low capacity and need to be replaced or recharged frequently. A portable power source which can continuously generate electrical power in situ will be an idea solution. Herein, we demonstrate a wind driven semiconductor electricity generator based on a dynamic Schottky junction, which can output a continuous direct current with an average value of 4.4 mA (the maximum value of 8.4 mA) over 360 seconds. Compared with the previous metal/semiconductor generator, the output current is one thousand times higher. Furthermore, this wind driven generator has been explored to function as a turn counter due to its stable output and also to drive a graphene ultraviolet photodetector, which shows a responsivity of 35.8 A/W under the 365 nm ultraviolet light. Our research provides a feasible method to achieve wind power generation and power supply for distributed sensors in the future.
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There is a rising prospective in harvesting energy from water droplets, as microscale energy is required for the distributed sensors in the interconnected human society. However, achieving a sustainable direct-current generating device from water flow is rarely reported, and the quantum polarization principle of the water molecular remains uncovered. Herein, we propose a dynamic water-semiconductor junction with moving water sandwiched between two semiconductors as a moving dielectric medium, which outputs a sustainable direct-current voltage of 0.3 V and current of 0.64 uA with low internal resistance of 390 kilohm. The sustainable direct-current electricity is originating from the dynamic water polarization process in water-semiconductor junction, in which water molecules are continuously polarized and depolarized driven by the mechanical force and Fermi level difference, during the movement of the water on silicon. We further demonstrated an encapsulated portable power-generating device with simple structure and continuous direct-current voltage, which exhibits its promising potential application in the field of wearable electronic generators.
After the electromagnetic generator, searching for novel electric generators without strong magnetic field is highly demanded. The generator without strong magnetic field calls for a physical picture distinct from the traditional generators. As the counterpart of the static PN junction has been widely used in the integrated circuits, we develop an electric generator named dynamic PN generator with a high current density and voltage output, which converts mechanical energy into electricity by sliding two semiconductors with different Fermi level. A dynamic N-GaAs/SiO2/P-Si generator with the open-circuit voltage of 3.1 V and short-circuit density of 1.0 A/m2 have been achieved. The physical mechanism of the dynamic PN generator is proposed based on the built-in electric field bounding back diffusing carriers in dynamic PN junctions, which breaks the equilibrium between drift and diffusion current in the PN junction. Moreover, the dynamic MoS2/AlN/Si generator with the open-circuit voltage of 5.1 V and short-circuit density of 112 A/m2 (11.2 mA/cm2) have also been achieved, which can effectively output a direct-current and light up a blue light-emitting diode directly. This dynamic MoS2/AlN/Si generator can continuously work for hours without obvious degradation, demonstrating its unique mechanism and potential applications in many fields where the mechanical energy is available.
Traditionally, Schottky diodes are used statically in the electronic information industry but dynamic state Schottky diodes based applications have been rarely explored. Herein, a novel Schottky diode named moving Schottky diode generator has been designed, which can convert mechanical energy into electrical energy with voltage output as high as 0.6V, by means of lateral movement between graphene/metal film and semiconductor, where the semiconductor can be non-piezoelectric materials. The mechanism is based on the built-in electric field separation of drifting electrons in moving van der Waals Schottky diode. The power output can be further increased in future through optimizing the Schottky diode. The graphene film/silicon moving van der Waals Schottky diode based generator behaves better stability. This direct-current generator has the potential of converting mechanical efficiently and vibrational energy into electricity and enables many promising applications.
Miniaturized or even microscale generators that could effectively and persistently converse weak and random mechanical energy from environments into electricity promise huge applications in the internet of things, sensor networks, big data, personal health systems, artificial intelligence, etc. However, such generators havent appeared yet because either the current density, or persistence, or both of all reported attempts were too low to real applications. Here, we demonstrate a superlubric Schottky generator (SLSG) in microscale such that the sliding contact between a microsized graphite flake and an n-type silicon is in a structural superlubric state, namely a ultralow friction and wearless state. This SLSG generates a stable electrical current at a high density (~119 Am-2) for at least 5,000 cycles. Since no current decay and wear were observed during the entire experiment, we believe that the real persistence of the SLSG should be enduring or substantively unlimited. In addition, the observed results exclude the mechanism of friction excitation in our Schottky generator, and provide the first experimental support of the conjectured mechanism of depletion layer establishment and destruction (DLED). Furthermore, we demonstrate a physical process of the DLED mechanism by the use of a quasi-static semiconductor finite element simulation. Our work may guide and accelerate future SLSGs into real applications.
Liquid electricity generator and hydrovoltaic technology have received numerous attentions, which can be divided into horizontal movement generator and vertical movement generator. The horizontal movement generator is limited for powering the integrated and miniaturized energy chip as the current output direction is depending on the moving direction of the water droplet, which means a sustainable and continuous direct-current (DC) electricity output can be hardly achieved because of the film of limited length. On the other hand, the existing vertical movement generators include triboelectricity or humidity gradient-based liquid electricity generator, where the liquid or water resource must be sustainably supplied to ensure continuous current output. Herein, we have designed an integratable vertical generator by sandwiching water droplets with semiconductor and metal, such as graphene or aluminum. This generator, named as polarized liquid molecular generator (PLMG), directly converts the lateral kinetic energy of water droplet into vertical DC electricity with an output voltage of up to ~1.0 V from the dynamic water-semiconductor interface. The fundamental discovery of PLMG is related to the non-symmetric structure of liquid molecules, such as water and alcohols, which can be polarized under the guidance of built-in field caused by the Fermi level difference between metal and semiconductor, while the symmetric liquid molecules cannot produce any electricity on the opposite. Integratable PLMG with a large output power of ~90 nW and voltage of ~2.7 V has been demonstrated, meanwhile its small internal resistance of ~250 kilohm takes a huge advantage in resistance matching with the impedance of electron components. The PLMG shows potential application value in the Internet of Things (IoTs) after proper miniaturization and integration.
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