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Register a new userRadiation problems accompanying carrier production by an electric field in the graphene
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A number of physical processes occurring in a flat one-dimensional graphene structure under the action of strong time-dependent electric fields are considered. It is assumed that the Dirac model can be applied to the graphene as a subsystem of the general system under consideration, which includes an interaction with quantized electromagnetic field. The Dirac model itself in the external electromagnetic field (in particular, the behavior of charged carriers) is treated nonperturbatively with respect to this field within the framework of strong-field QED with unstable vacuum. This treatment is combined with a kinetic description of the radiation of photons from the electron-hole plasma created from the vacuum under the action of the electric field. An interaction with quantized electromagnetic field is described perturbatively. A significant development of the kinetic equation formalism is presented. A number of specific results are derived in course of analytical and numerical study of the equations. We believe that some of predicted effects and properties of considered processes may be verified experimentally. Among these effects, it should be noted a characteristic spectral composition anisotropy of the quantum radiation and a possible presence of even harmonics of the external field in the latter radiation.
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Electric fields can spontaneously decay via the Schwinger effect, the nucleation of a charged particle-anti particle pair separated by a critical distance $d$. What happens if the available distance is smaller than $d$? Previous work on this question has produced contradictory results. Here, we study the quantum evolution of electric fields when the field points in a compact direction with circumference $L < d$ using the massive Schwinger model, quantum electrodynamics in one space dimension with massive charged fermions. We uncover a new and previously unknown set of instantons that result in novel physics that disagrees with all previous estimates. In parameter regimes where the field value can be well-defined in the quantum theory, generic initial fields $E$ are in fact stable and do not decay, while initial values that are quantized in half-integer units of the charge $E = (k/2) g$ with $kin mathbb Z$ oscillate in time from $+(k/2) g$ to $-(k/2) g$, with exponentially small probability of ever taking any other value. We verify our results with four distinct techniques: numerically by measuring the decay directly in Lorentzian time on the lattice, numerically using the spectrum of the Hamiltonian, numerically and semi-analytically using the bosonized description of the Schwinger model, and analytically via our instanton estimate.
We investigate plasmon resonances in graphene with periodic carrier density modulation. The period is 8 um, and each period consists of 1.7- and 6.3-um-wide ribbons with different density. Using terahertz spectroscopy, we show two plasmon modes with their electric field mostly localized in the 1.7- or 6.3-um-wide ribbon arrays. We also show that plasmons are excited only in one of the micro-ribbon arrays when the Fermi energy of the other micro-ribbon array is set close to the charge neutrality point. These results indicate that plasmons can be confined by the carrier density modulation.
The modulation of the transmitted (reflected) radiation due to change of interband transitions under variation of carriers concentration by the gate voltage is studied theoretically. The calculations were performed for strongly doped graphene on high-K (Al_2O_3, HfO_2, AlN, and ZrO_2) or SiO_2 substrates under normal propagation of radiation. We have obtained the modulation depth above 10% depending on wavelength, gate voltage (i.e. carriers concentration), and parameters of substrate. The graphene - dielectric substrate - doped Si (as gate) structures can be used as an effective electrooptical modulator of near-IR and mid-IR radiation for the cases of high-K and SiO_2 substrates, respectively.
Graphene-based moir{e} systems have attracted considerable interest in recent years as they display a remarkable variety of correlated phenomena. Besides insulating and superconducting phases in the vicinity of integer fillings of the moir{e} unit cell, there is growing evidence for electronic nematic order both in twisted bilayer graphene and twisted double-bilayer graphene (tDBG), as signaled by the spontaneous breaking of the threefold rotational symmetry of the moir{e} superlattices. Here, we combine symmetry-based analysis with a microscopic continuum model to investigate the structure of the nematic phase of tDBG and its experimental manifestations. First, we perform a detailed comparison between the theoretically calculated local density of states and recent scanning tunneling microscopy data [arXiv:2009.11645] to resolve the internal structure of the nematic order parameter in terms of the layer, sublattice, spin, and valley degrees of freedom. We find strong evidence that the dominant contribution to the nematic order parameter comes from states at the moir{e} scale rather than at the microscopic scale of the individual graphene layers, which demonstrates the key role played by the moire degrees of freedom and confirms the correlated nature of the nematic phase in tDBG. Secondly, our analysis reveals an unprecedented tunability of the orientation of the nematic director in tDBG by an externally applied electric field, allowing the director to rotate away from high-symmetry crystalline directions. We compute the expected fingerprints of this rotation in both STM and transport experiments, providing feasible ways to probe it. Rooted in the strong sensitivity of the flat bands of tDBG to the displacement field, this effect opens an interesting route to the electrostatic control of electronic nematicity in moir{e} systems.
Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphenes dynamical response to a photoexcitation.
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