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Register a new userBurton-Cabrera-Frank theory for surfaces with alternating step types
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Burton-Cabrera-Frank (BCF) theory has proven to be a versatile analysis to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of crystal surfaces, including the basal planes of hexagonal close-packed and related systems, the steps in a sequence on a vicinal surface can exhibit properties that alternate from step to step. Here we develop BCF theory for such surfaces, to relate observables such as the alternating terrace widths as a function of growth conditions to the kinetic coefficients for adatom attachment at steps. We include the effects of step transparency and step-step repulsion. A general solution is obtained for the dynamics of the terrace widths assuming quasi-steady-state adatom distributions on the terraces, and an explicit simplified analytical solution is obtained under widely applicable approximations. We obtain expressions for the steady-state terrace fractions as a function of growth rate. Limiting cases of diffusion-limited, attachment-limited, and mixed kinetics are considered.
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The propagation of sidewall steps during the growth of nanowires is calculated in the frame of the Burton-Cabrera-Frank model. The stable shape of the nanowire comprises a cylinder section on top of a cone section: their characteristics are obtained as a function of the radius of the catalyst-nanowire area, the desorption-limited diffusion length of adatoms on the terraces, and the sticking of adatoms at step edges. The comparison with experimental data allows us to evaluate these last two parameters for InP and ZnTe nanowires; it reveals a different behavior for the two materials, related to a difference by an order of magnitude of the desorption-limited diffusion length.
Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an {alpha}{beta}{alpha}{beta} stacking sequence, there have been long-standing questions regarding how the differences in adatom attachment kinetics at the steps separating the terraces affect the fractional coverage of {alpha} vs. {beta} termination during crystal growth. To demonstrate how surface X-ray scattering can help address these questions, we develop a general theory for the intensity distributions along crystal truncation rods (CTRs) for miscut surfaces with a combination of two terminations. We consider half-unit-cell-height steps, and variation of the coverages of the terraces above each step. Example calculations are presented for the GaN (0001) surface with various reconstructions. These show which CTR positions are most sensitive to the fractional coverage of the two terminations. We compare the CTR profiles for exactly oriented surfaces to those for vicinal surfaces having a small miscut angle, and investigate the circumstances under which the CTR profile for an exactly oriented surface is equal to the sum of the intensities of the corresponding family of CTRs for a miscut surface.
For more than three decades, measurement of terrace width distributions (TWDs) of vicinal crystal surfaces have been recognized as arguably the best way to determine the dimensionless strength $tilde{A}$ of the elastic repulsion between steps. For sufficiently strong repulsions, the TWD is expected to be Gaussian, with $tilde{A}$ varying inversely with the squared variance. However, there has been a controversy over the proportionality constant. From another perspective the TWD can be described as a continuous generalized Wigner distribution (CGWD) essentially no more complicated than a Gaussian but a much better approximation at the few calibration points where exact solutions exist. This paper combines concisely the experimentally most useful results from several earlier papers on this subject and describes some advancements that are in progress regarding numerical tests and in using Schrodinger-equation formalism to give greater understanding of the origin of the CGWD and to give hope of extensions to more general interaction potentials between steps. There are many implications for future experiments.
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally identify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in situ microbeam surface X-ray scattering can determine whether A or B steps have faster kinetics under specific growth conditions. We demonstrate this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed during growth find that the average width of terraces above A steps increases with growth rate, indicating that attachment rate constants are higher for A steps, in contrast to most predictions. Our results have direct implications for understanding the atomic-scale mechanisms of GaN growth and can be applied to a wide variety of related crystals.
We study current-induced step bunching and wandering instabilities with subsequent pattern formations on vicinal surfaces. A novel two-region diffusion model is developed, where we assume that there are different diffusion rates on terraces and in a small region around a step, generally arising from local differences in surface reconstruction. We determine the steady state solutions for a uniform train of straight steps, from which step bunching and in-phase wandering instabilities are deduced. The physically suggestive parameters of the two-region model are then mapped to the effective parameters in the usual sharp step models. Interestingly, a negative kinetic coefficient results when the diffusion in the step region is faster than on terraces. A consistent physical picture of current-induced instabilities on Si(111) is suggested based on the results of linear stability analysis. In this picture the step wandering instability is driven by step edge diffusion and is not of the Mullins-Sekerka type. Step bunching and wandering patterns at longer times are determined numerically by solving a set of coupled equations relating the velocity of a step to local properties of the step and its neighbors. We use a geometric representation of the step to derive a nonlinear evolution equation describing step wandering, which can explain experimental results where the peaks of the wandering steps align with the direction of the driving field.
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