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Register a new userLight-Induced Static Magnetization: Nonlinear Edelstein Effect
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We theoretically and computationally demonstrate that static magnetization can be generated under light illumination via nonlinear Edelstein effect (NLEE). NLEE is applicable to semiconductors under both linearly and circularly polarized light, and there are no constraints from either spatial inversion or time-reversal symmetry. Remarkably, magnetization can be induced under linearly polarized light in nonmagnetic materials. With ab initio calculations, we reveal several prominent features of NLEE. We find that the orbital contributions can be significantly greater than the spin contributions. And magnetization with various orderings, including anti-ferromagnetic, ferromagnetic, etc., are all realizable with NLEE, which may facilitate many applications, such as unveiling hidden physical effects, creating a spatially varying magnetization, or manipulating the magnetization of anti-ferromagnetic materials. The relationship between NLEE and other magneto-optic effects, including the inverse Faraday effect and inverse Cotton-Mouton effect, is also discussed.
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We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin of the light-induced magnetization precession is discussed and the magnetization precession damping (Gilbert damping) is found to be strongly influenced by annealing of the sample.
It is well known that a current driven through a two-dimensional electron gas with Rashba spin-orbit coupling induces a spin polarization in the perpendicular direction (Edelstein effect). This phenomenon has been extensively studied in the linear response regime, i.e., when the average drift velocity of the electrons is a small fraction of the Fermi velocity. Here we investigate the phenomenon in the nonlinear regime, meaning that the average drift velocity is comparable to, or exceeds the Fermi velocity. This regime is realized when the electric field is very large, or when electron-impurity scattering is very weak. The quantum kinetic equation for the density matrix of noninteracting electrons is exactly and analytically solvable, reducing to a problem of spin dynamics for unpaired electrons near the Fermi surface. The crucial parameter is $gamma=eEL_s/E_F$, where $E$ is the electric field, $e$ is the absolute value of the electron charge, $E_F$ is the Fermi energy, and $L_s = hbar/(2malpha)$ is the spin-precession length in the Rashba spin-orbit field with coupling strength $alpha$. If $gammall1$ the evolution of the spin is adiabatic, resulting in a spin polarization that grows monotonically in time and eventually saturates at the maximum value $n(alpha/v_F)$, where $n$ is the electron density and $v_F$ is the Fermi velocity. If $gamma gg 1$ the evolution of the spin becomes strongly non-adiabatic and the spin polarization is progressively reduced, and eventually suppressed for $gammato infty$. We also predict an inverse nonlinear Edelstein effect, in which an electric current is driven by a magnetic field that grows linearly in time. The conductivities for the direct and the inverse effect satisfy generalized Onsager reciprocity relations, which reduce to the standard ones in the linear response regime.
We demonstrate a spin to charge current conversion via magnon-phonon coupling and inverse Edelstein effect on the hybrid device Ni/Cu(Ag)/Bi$_{2}$O$_{3}$. The generation of spin current ($J_{s}approx 10^{8}A/m^{2}$) due to magnon - phonon coupling reveals the viability of acoustic spin pumping as mechanism for the development of spintronic devices. A full in-plane magnetic field angle dependence of the power absorption and a combination of longitudinal and transverse voltage detection reveals the symmetric and asymmetric components of the inverse Edelstein effect voltage induced by Rayleigh type surface acoustic waves. While the symmetric components are well studied, asymmetric components are widely unexplored. We assign the asymmetric contributions to the interference between longitudinal and shear waves and an anisotropic charge distribution in our hybrid device.
We propose that the hybridization between two sets of Rashba bands can lead to an unconventional topology where the two Fermi circles from different bands own in-plane helical spin textures with the same chiralities, and possess group velocities with the same directions. Under the weak spin injection, the two Fermi circles both give the positive contributions to the spin-to-charge conversion and thus induce the giant inverse Rashba-Edelstein Effect with large conversion efficiency, which is very different from the conventional Rashba-Edelstein Effect. More importantly, through the first-principles calculations, we predict that monolayer OsBi2 could be a good candidate to realize the giant inverse Rashba-Edelstein Effect. Our studies not only demonstrate a new mechanism to achieve highly efficient spin-to-charge conversion in spintronics, but also provide a promising material to realize it.
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second harmonic Hall voltage has been utilized as one of the methods for estimating spin Hall angle, which is attributed to the magnetization oscillation by SOT. Here, we argue the second harmonic Hall voltage in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$. From the angular, temperature and magnetic field dependence, it is unambiguously shown that the large second harmonic Hall voltage in TI heterostructures is governed not by SOT but mainly by asymmetric magnon scattering mechanism without magnetization oscillation. Thus, this method does not allow an accurate estimation of spin Hall angle when magnons largely contribute to electron scattering. Instead, the SOT contribution in a TI heterostructure is exemplified by current pulse induced non-volatile magnetization switching, which is realized with a current density of $sim 2.5 times 10^{10} mathrm{A/m}^2$, showing its potential as spintronic materials.
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