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An advanced modeling approach is presented to shed light on the thermal transport properties of van der Waals materials (vdWMs) composed of single-layer transition metal dichalcogenides (TMDs) stacked on top of each other with a total or partial overlap only in the middle region. It relies on the calculation of dynamical matrices from first-principle and on their usage in a phonon quantum transport simulator. We observe that vibrations are transferred microscopically from one layer to the other along the overlap region which acts as a filter selecting out the states that can pass through it. Our work emphasizes the possibility of engineering heat flows at the nanoscale by carefully selecting the TMD monolayers that compose vdWMs.
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The exfoliation of two naturally occurring van der Waals minerals, graphite and molybdenite, arouse an unprecedented level of interest by the scientific community and shaped a whole new field of research: 2D materials research. Several years later, the family of van der Waals materials that can be exfoliated to isolate 2D materials keeps growing, but most of them are synthetic. Interestingly, in nature plenty of naturally occurring van der Waals minerals can be found with a wide range of chemical compositions and crystal structures whose properties are mostly unexplored so far. This Perspective aims to provide an overview of different families of van der Waals minerals to stimulate their exploration in the 2D limit.
The van der Waals (vdW) force is a ubiquitous short-range interaction between atoms and molecules that underlies many fundamental phenomena. Early pairwise additive theories pioneered by Keesom, Debye, and London suggested the force to be monotonically attractive for separations larger than the vdW contact distance. However, seminal work by Lifshitz et al. predicted that quantum fluctuations can change the sign of vdW interactions from attractive to repulsive. Although recent experiments carried out in fluid environment have demonstrated the long-range counterpart the Casimir repulsion, it remains controversial whether the vdW repulsion exists, or is sufficiently strong to alter solid-state properties. Here we show that the atomic thickness and birefringent nature of two-dimensional (2D) materials, arising from their anisotropic dielectric responses, make them a versatile medium to tailor the many-body Lifshitz-vdW interactions at solid-state interfaces. Based on our theoretical prediction, we experimentally examine two heterointerface systems in which the vdW repulsion becomes comparable to the two-body attraction. We demonstrate that the in-plane movement of gold atoms on a sheet of freestanding graphene becomes nearly frictionless at room temperature. Repulsion between molecular solid and gold across graphene results in a new polymorph with enlarged out-of-plane lattice spacings. The possibility of creating repulsive energy barriers in nanoscale proximity to an uncharged solid surface offers technological opportunities such as single-molecule actuation and atomic assembly.
2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional inversion asymmetry in single-layers, which restricts 2D intercorrelated ferroelectrics to extremely few systems. Herein, we propose a new scheme for achieving 2D intercorrelated ferroelectrics using van der Waals (vdW) interaction, and apply this scheme to a vast family of 2D vdW materials. Using first-principles, we demonstrate that 2D vdW multilayers-for example, BN, MoS2, InSe, CdS, PtSe2, TI2O, SnS2, Ti2CO2 etc.- can exhibit coupled in-plane and out-of-plane ferroelectricity, thus yielding 2D intercorrelated ferroelectricsferroelectric physics. We further predict that such intercorrelated ferroelectrics could demonstrate many distinct properties, for example, electrical full control of spin textures in trilayer PtSe2 and electrical permanent control of valley-contrasting physics in four-layer VS2. Our finding opens a new direction for 2D intercorrelated ferroelectric research.
Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed interfacial van der Waals and covalent bonding may be realized. Atomically thin layers formed at the epitaxial graphene (EG)/silicon carbide (SiC) interface indicate that EG/SiC interfaces provide this unique environment and enable synthesis of a rich palette of 2D materials not accessible with traditional techniques. Here, we demonstrate a method termed confinement heteroepitaxy (CHet), to realize air-stable, structurally unique, crystalline 2D-Ga, In, and Sn at the EG/SiC interface. The first intercalant layer is covalently-bonded to the SiC, and is accompanied by a vertical bonding gradient that ends with van der Waals interactions. Such structures break out of plane centrosymmetry, thereby introducing atomically thin, non-centrosymmetric 2D allotropes of 3D materials as a foundation for tunable superconductivity, topological states, and plasmonic properties.
We investigate the lattice and electronic structures of the bulk and surface of the prototypical layered topological insulators Bi$_2$Se$_3$ and Bi$_2$Te$_3$ using ab initio density functional methods, and systematically compare the results of different methods of including van der Waals (vdW) interactions. We show that the methods utilizing semi-empirical energy corrections yield accurate descriptions of these materials, with the most precise results obtained by properly accounting for the long-range tail of the vdW interactions. The bulk lattice constants, distances between quintuple layers and the Dirac velocity of the topological surface states (TSS) are all in excellent agreement with experiment. In Bi$_2$Te$_3$, hexagonal warping of the energy dispersion leads to complex spin textures of the TSS at moderate energies, while in Bi$_2$Se$_3$ these states remain almost perfectly helical away from the Dirac point, showing appreciable signs of hexagonal warping at much higher energies, above the minimum of the bulk conduction band. Our results establish a framework for unified and systematic self-consistent first principles calculations of topological insulators in bulk, slab and interface geometries, and provides the necessary first step towards ab initio modeling of topological heterostructures.
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