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Register a new userChiral charge-density wave in TiSe$_2$ due to photo-induced structural distortions
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Added by
Darshana Wickramaratne
Publication date
2020
fields
Physics
and research's language is
English
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A variety of experiments have been carried out to establish the origin of the chiral charge-density wave transition in 1T-TiSe$_2$, which in turn has led to contradictory conclusions on the origin of this transition. Some studies suggest the transition is a phonon-driven structural distortion while other studies suggest it is an excitonic insulator phase transition that is accompanied by a lattice distortion. First, we propose these interpretations can be reconciled if one analyzes the available experimental and theoretical data within a formal definition of what constitutes an excitonic insulator as initially proposed by Keldysh and Kopaev. Next, we present pump-probe measurements of circularly polarized optical transitions and first-principles calculations where we highlight the importance of accounting for structural distortions to explain the finite chirality of optical transitions in the CDW phase. We show that at the elevated electronic temperature that occurs upon photoexcitation, there is a non-centrosymmetric structure that is near-degenerate in energy with the centrosymmetric charge density wave structure, which explains the finite chirality of the optical transitions observed in the CDW phase of TiSe$_2$.
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In Ti-intercalated self-doped $1T$-TiSe$_2$ crystals, the charge density wave (CDW) superstructure induces two nonequivalent sites for Ti dopants. Recently, it has been shown that increasing Ti doping dramatically influences the CDW by breaking it into phase-shifted domains. Here, we report scanning tunneling microscopy and spectroscopy experiments that reveal a dopant-site dependence of the CDW gap. Supported by density functional theory, we demonstrate that the loss of the longrange phase coherence introduces an imbalance in the intercalated-Ti site distribution and restrains the CDW gap closure. This local resilient behavior of the $1T$-TiSe$_2$ CDW reveals a novel mechanism between CDW and defects in mutual influence.
In this study, using low-temperature scanning tunneling microscopy (STM), we focus on understanding the native defects in pristine textit{1T}-TiSe$_2$ at the atomic scale. We probe how they perturb the charge density waves (CDWs) and lead to local domain formation. These defects influence the correlation length of CDWs. We establish a connection between suppression of CDWs, Ti intercalation, and show how this supports the exciton condensation model of CDW formation in textit{1T}-TiSe$_2$.
A charge density wave (CDW) of a nonzero ordering vector $mathbf{q}$ couple electronic states at $mathbf{k}$ and $mathbf{k}+mathbf{q}$ statically, giving rise to a reduced Brillouin zone (RBZ) due to the band folding effect. Its structure, in terms of an irreducible representation of the little group of $mathbf{q}$, would change the symmetry of the system and electronic structure accompanying possible change of band inversion, offering a chance of the topological phase transition. Monolayer 1textit{T}-TiSe$_2$ is investigated for it shows an unconventional CDW phase having a triple-$q$ $M_1^-$ structure. Moreover, the coupling between the triple-$q$ component of the $M_1^-$ CDW will inevitably produce a small $M_1^+$ CDW. The CDW yields a band inversion in 1textit{T}-TiSe$_2$ but different types of CDW can affect the electronic structure and system topology differently. The impact of CDW of different types was studied by utilizing a symmetrization-antisymmetrization technique to extract the $M_1^-$ and $M_1^+$ CDW contributions in the DFT-based tight-binding model and study their effects. The results are consistent with the parity consideration, improving understanding of topology for a CDW system with and without parity.
Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the charge density wave (CDW) order. This is dramatically different from either bulk single crystal TiSe$_2$ or TiSe$_2$ thin films on graphene. The epitaxial TiSe$_2$ thin films can be prepared on TiO$_2$ via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating only selenium on reconstructed TiO$_2$ surfaces. Both growth methods yield atomically flat thin films with similar physical properties. The electron doping and subsequent suppression of CDW order can be explained by selenium vacancies in the TiSe$_2$ film, which naturally occur when TiO$_2$ substrates are used. This is due to the stronger interfacial bonding that changes the ideal growth conditions. Our finding provides a way to tune the chemical potential of chalcogenide thin films via substrate selection and engineering.
We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{text{x}}$TiSe$_{text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period does not depend on Cu content, we observe the formation of charge stripe domains at low Cu content (x$<$0.02) and a breaking up of the commensurate order into 2$times$2 domains at higher Cu content. The latter shrink with increasing Cu concentration and tend to be phase-shifted. These findings invalidate a proposed excitonic pairing as the primary CDW formation mechanism in this material.
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