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Register a new userHigh-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion
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High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and high flexibility of photonionization. We achieve an overall fidelity $>$ 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.
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Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.
We use the electronic spin of a single Nitrogen-Vacancy (NV) defect in diamond to observe the real-time evolution of neighboring single nuclear spins under ambient conditions. Using a diamond sample with a natural abundance of $^{13}$C isotopes, we first demonstrate high fidelity initialization and single-shot readout of an individual $^{13}$C nuclear spin. By including the intrinsic $^{14}$N nuclear spin of the NV defect in the quantum register, we then report the simultaneous observation of quantum jumps linked to both nuclear spin species, providing an efficient initialization of the two qubits. These results open up new avenues for diamond-based quantum information processing including active feedback in quantum error correction protocols and tests of quantum correlations with solid-state single spins at room temperature.
The speed of quantum gates and measurements is a decisive factor for the overall fidelity of quantum protocols when performed on physical qubits with finite coherence time. Reducing the time required to distinguish qubit states with high fidelity is therefore a critical goal in quantum information science. The state-of-the-art readout of superconducting qubits is based on the dispersive interaction with a readout resonator. Here, we bring this technique to its current limit and demonstrate how the careful design of system parameters leads to fast and high-fidelity measurements without affecting qubit coherence. We achieve this result by increasing the dispersive interaction strength, by choosing an optimal linewidth of the readout resonator, by employing a Purcell filter, and by utilizing phase-sensitive parametric amplification. In our experiment, we measure 98.25% readout fidelity in only 48 ns, when minimizing read-out time, and 99.2% in 88 ns, when maximizing the fidelity, limited predominantly by the qubit lifetime of 7.6 us. The presented scheme is also expected to be suitable for integration into a multiplexed readout architecture.
The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date ($sim 250$ ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV$^-$ electronic spin coherence by five orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV$^-$ symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV$^-$ spin with 89% fidelity. Coherent control of the SiV$^-$ spin with microwave fields is used to demonstrate a spin coherence time $T_2$ of 13 ms and a spin relaxation time $T_1$ exceeding 1 s at 100 mK. These results establish the SiV$^-$ as a promising solid-state candidate for the realization of scalable quantum networks.
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